YZPST-C712L
YZPST-C712L
  • YZPST-C712L.pdf YZPST-C712L.pdf
  • YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts 20200518.pdf YANGZHOU POSITIONING TECH CO Power thyristor and diode parts 20200518.pdf
  • DESCRIPTION
  • SPECIFICATION

Features:

  • All Diffused Structure
  • Center Amplifying Gate Configuration
  • Blocking capabilty up to 2100 volts
  • Guaranteed Maximum Turn-Off Time
  • High dV/dt Capability
  • Pressure Assembled Device
Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

2000

2000

2100

VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM



20 mA
90 mA (3)


Critical rate of voltage rise

dV/dt (4)

800 V/msec

Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range  -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-tion to that obtained from a snubber circuit,comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.
For more information about Inverter Thyristor please download the PDF file above named " YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts "

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)


1185


A

Sinewave,180o conduction,Tc=80oC

RMS value of on-state current

ITRMS


1700


A

Nominal value


Peak one cPSTCle surge
(non repetitive) current



ITSM


-

18500


A

A


8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC


I square t

I2t


1.66x106


A2s

8.3 msec and 10.0 msec

Latching current

IL


-


mA

VD = 24 V; RL= 12 ohms

Holding current

IH


-


mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


1.45


V

ITM = 1000 A; Duty Cycle £ 0.01%; Tj =1 25 oC


Critical rate of rise of on-state
current (5, 6)


di/dt


800


A/ms


Switching from VDRM £ 1000 V,
non-repetitive



Critical rate of rise of on-state
current (6)


di/dt


200


A/ms

Switching from VDRM £ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS
Gating
Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


100


W

tp = 40 us

Average gate power dissipation

PG(AV)


5


W


Peak gate current

IGM


-


A


Gate current required to trigger all units

IGT



-
120
-




mA
mA
mA



VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = +25 oC
VD = 6 V;RL = 3 ohms;Tj = +125oC


Gate voltage required to trigger all units


VGT



-
3.0
-




V
V
V



VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = 0-125oC
VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC


Peak negative voltage

VGRM


20


V



Dynamic
Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td


-

0.7

ms


ITM = 50 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms


Turn-off time (with VR = -50 V)

tq


40

-

ms


ITM = 1000 A; di/dt = 25 A/ms;
VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle ³ 0.01%


Reverse recovery charge

Qrr


*


mC


ITM = 1000 A; di/dt = 25 A/ms;
VR ³ -50 V



* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+125


oC


Thermal resistance - junction to case

RQ (j-c)



0.023
-



oC/W


Double sided cooled
Single sided cooled


Thermal resistamce - case to sink

RQ (c-s)



0.0075
-



oC/W


Double sided cooled *
Single sided cooled *


Mounting force

P

22.2

26.6


kN


Weight

W



-

g

About

* Mounting surfaces smooth, flat and greased

CASE OUTLINE AND DIMENSIONS

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1

For more information about Inverter Thyristor please download the PDF file above named " YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts "
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