YZPST-FR1000AX50
YZPST-FR1000AX50
  • YZPST-FR1000AX50.pdf YZPST-FR1000AX50.pdf
  • YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts 20200518.pdf YANGZHOU POSITIONING TECH CO Power thyristor and diode parts 20200518.pdf
  • DESCRIPTION

Features:

  • All Diffused Structure
  • Interdigitated Amplifying Gate Configuration
  • Blocking capabilty up to 2500 volts
  • Guaranteed Maximum Turn-Off Time
  • High dV/dt Capability
  • Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State

Device Type

VDRM (1)

VDSM (1)

FR1000AX50

2500

2500

VDRM = Repetitive peak off state voltage

Repetitive peak off state leakage

IDRM



20 mA
80mA (3)


Critical rate of voltage rise

dV/dt (4)

700 V/msec

Conducting - on state

Parameter

Symbol


Max.

Typ.

Units

Conditions

RMS value of on-state current

ITRMS


1550


A

Nominal value

IT(AV)


1000




A

Continuous single-phase,half sine wave,180°conduction


Peak one cycle surge
(non repetitive) current



ITSM



14000



A


8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC


I square t

I2t


8.2.x105


A2s

8.3 msec and 10.0 msec

RNS reverse currrnt

IR(RMS)


630


A


Average reverse current

IR(AV)


400


A

Continuous single-phase,half sine wave,180°conduction

Peak on-state voltage

VTM


2.2


V

ITM=1000A Tj = 125 oC

Peak reverse voltage

VRM


4.0


V

IRM=1200A, Tj = 125 oC


Critical rate of rise of on-state
current


di/dt


300


A/ms

VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=125℃

Critical rate of decrease of reverse conmmutating current

(di/dt)C


200


A/ms

ITM=4000A,tw=60us,IRM=4000A,dv/dt=700V/us,VDM=1/2VDRN,Tj=125℃,Saturable reactor7500v.us

ELECTRICAL CHARACTERISTICS AND RATINGS (cont.)

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


30


W

tp = 40 us

Average gate power dissipation

PG(AV)


8


W


Peak gate current

IGM


10


A


Gate current required to trigger all units

IGT


350


mA


VD = 6 V;RL = 2 ohms;Tj = +25 oC

Gate voltage required to trigger all units


VGT



4



V

VD = 6 V;RL = 2 ohms;Tj = 25oC

Peak non- trigger voltage

VGD


0.2


V

Tj = 125 oC;VD=1/2VDRM

Dynamic

Parameter

Symbol

Max.

Typ.

Units

Conditions

tq


50



ms


ITM =4000 A; di1/dt = -200A/ms;
di2/dt=50A/us,IRM=500A; dV/dt =700 V/ms VDR=1250V
Tj = 125 oC;tw=60us


* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150


oC


Thyristor part thermal resistance - junction to fin

RQⅠ (j-f)


0.022


oC/W

Double sided cooled

Diode part thermal resistamce – junction to fin

RQⅢ (j-f)


0.070


oC/W

Double sided cooled

Mounting force

P


45


kN


Weight

W


670


g


* Mounting surfaces smooth, flat and greased

CASE OUTLINE AND DIMENSIONS.
FR1000AX50 Reverse-conducting Thyristor

For more information about Reverse Conducting Thyristor please download the PDF file above named " YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts "
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