YZPST-A1237NC280
YZPST-A1237NC280
  • YZPST-A1237NC280.pdf YZPST-A1237NC280.pdf
  • YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts 20200518.pdf YANGZHOU POSITIONING TECH CO Power thyristor and diode parts 20200518.pdf
  • DESCRIPTION
  • Electrical Characteristics And Ratings


Blocking - Off State

VDRM (1)

VDSM (1)

VRRM (1)

VRSM(1)

2800

2800

30

30

VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM


10 mA
60 mA (3)

Critical rate of voltage rise

dV/dt (4)

3000 V/msec

Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range  -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential  waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-tion to that obtained from a snubber circuit,comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.
For more information about Asymmetric Thyristor please download the PDF file above named " YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts "


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


30


W


Average gate power dissipation

PG(AV)


10


W


Peak gate current

IGM


-


A


Gate current required to trigger all units

IGT



-
400
-




mA
mA
mA



VD = 10 V;RL = 3 ohms;Tj = -40 oC
VD = 10 V;RL = 3 ohms;Tj = +25 oC
VD = 10 V;RL = 3 ohms;Tj = +125oC


Gate voltage required to trigger all units


VGT



-
3.0
-




V
V
V



VD = 10 V;RL = 3 ohms;Tj = -40 oC
VD = 10 V;RL = 3 ohms;Tj = 0-125oC
VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC


Peak negative voltage

VRGM


10


V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td


-

1

ms


ITM = 50 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms


Turn-off time (with VR = -50 V)

tq


-

20

ms


ITM = 1000 A; di/dt = 25 A/ms;
VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cycle ³ 0.01%


Reverse recovery charge

Qrr


-

-

mC


ITM = 1000 A; di/dt = 25 A/ms;
VR ³ -50 V



* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150


oC


Thermal resistance - junction to case

RQ (j-c)



-
-



K/KW


Double sided cooled
Single sided cooled


Thermal resistamce - case to heatsink

RQ (c-s)



-
-



K/KW


Double sided cooled *
Single sided cooled *


Thermal resistamce - junction to heatsink

RQ (j-s)



24
48



K/KW


Double sided cooled *
Single sided cooled *


Mounting force

P

19

26


kN


Weight

W



510

g

About

* Mounting surfaces smooth, flat and greased

CASE OUTLINE AND DIMENSIONS

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1

For more information about Asymmetric Thyristor please download the PDF file above named " YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts "
Feedback form contact with us
Product Catalog