YZPST-KS500A-1600V
YZPST-KS500A-1600V
  • YZPST-KS500A-1600V.pdf YZPST-KS500A-1600V.pdf
  • YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts 20200518.pdf YANGZHOU POSITIONING TECH CO Power thyristor and diode parts 20200518.pdf
  • DESCRIPTION


Features


Center amplifying gate configuration
Compression bonded encapsulation
High dV/dt Capability
Stud type, thread inch or metric


Typical Applications


Medium power switching
DC power supplies
Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE




ITAV

Mean on-state current

-

A

Sinewave,180° conduction,Tc=125℃

ITRMS

RMS value of on-state current

500

A

Nominal value

ITSM


Peak one cycle surge
(non repetitive) current


4200

A


10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC


I2t

I square t

245

kA2s

8.3 msec and 10.0 msec

IL

Latching current(Ⅰ-Ⅱ-Ⅲ-Ⅳ)

-

mA

I G = 1.2 I GT

IH

Holding current

-

mA

I T = 500 mA

VTM

Peak on-state voltage

2.4

V

ITM =750A; Duty cycle £ 0.01%

di/dt


Critical rate of rise
of on-state current


non-repetitive


A/ms


Tj =100 oC V D= 1/2VDRM, ITM=(2x ITAV) A
Gate pulse:tw≥20μs, tr≤0.5μs fG=50Hz
IGM≥5 IGT


repetitive

50

BLOCKING





VDRM
VRRM



Repetitive peak off state voltage
Repetitive peak reverse voltage


1600

V



VDSM
VRSM



Non repetitive peak off state voltage
Non repetitive peak reverse voltage


1700

V



IDRM
IRRM


Repetitive peak off state current Repetitive peak reverse  current

25

mA

Tj = 125 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

500

V/ms

Tj = 125 oC VD =0.67 VDRM Gate open

TRIGGEING




PG(AV)

Average gate power dissipation

-

W


PGM

Peak gate power dissipation

-

W


IGM

Peak gate current

-

A


IGT

Gate trigger current(Ⅰ-Ⅱ-Ⅲ-Ⅳ)

300

mA

TC = 25 oC

VGT

Gate trigger voltage(Ⅰ-Ⅱ-Ⅲ-Ⅳ)

3.0

V

TC = 25 oC

VGD

Gate non-trigger voltage

-

V

Tj = 125 oC

SWITCHING




tq

Turn-off time

-

ms


Qrr

Reverse recovery charge

-



Thermal And Mechanical

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC


Tstg

Storage temperature

-40~125

oC


R th (j-c)

Thermal resistance - junction to case

0.043

oC/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

-

oC/W

Single sided cooled

P

Mounting force

5.3 ~ 10

kN


W

Weight

-

g


OUTLINE

Sym

A

B

C

D

H

mm

59

34

53

3.5×3

26±1

For more information about Triac please download the PDF file above named " YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts "
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