YZPST-R0929LC10 (TQ_10US)
YZPST-R0929LC10 (TQ_10US)
  • YZPST-R0929LC10 TQ 10US.pdf YZPST-R0929LC10 TQ 10US.pdf
  • YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts 20200518.pdf YANGZHOU POSITIONING TECH CO Power thyristor and diode parts 20200518.pdf
  • DESCRIPTION
  • SPECIFICATION

Features:

  • All Diffused Structure
  • Interdigitated Amplifying Gate Configuration
  • Guaranteed Maximum Turn-Off Time
  • High dV/dt Capability
  • Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

1000

1100

1200

VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM


15 mA
70 mA (3)


Critical rate of voltage rise

dV/dt (4)

200 V/msec

Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range  -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.
For more information about High Frequency Thyristor please download the PDF file above named " YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts "

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M


929


A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m


1893


A

Nominal value


Peak one cPSTCle surge
(non repetitive) current



ITSM



-
9.0



kA

kA


8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC


I square t

I2t


405x103


A2s

8.3 msec

Latching current

IL


-


mA

VD = 24 V; RL= 12 ohms

Holding current

IH


1000


mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


2.04


V

ITM = 1400 A


Critical rate of rise of on-state
current (5, 6)


di/dt


1500


A/ms


Switching from VDRM £ 1000 V,
non-repetitive



Critical rate of rise of on-state
current (6)


di/dt


1000


A/ms

Switching from VDRM £ 1000 V


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


30


W


Average gate power dissipation

PG(AV)


2


W


Peak gate current

IGM


-


A


Gate current required to trigger all units

IGT


300


mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units


VGT


3.0


V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM


5


V



Dynamic
Parameter

Symbol

Min.

Max.

Typ.

Units

Delay time

tgd


1.0

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt


2.0

-


Turn-off time (with VR = -5 V)

tq

-

10

-

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/us

Reverse recovery current

Irm


-


A

ITM=4000A, tp=2000us, di/dt=60A/us


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150


oC


Thermal resistance - junction to case

RQ (j-c)



-
-



K/kW


Double sided cooled
Single sided cooled


Thermal resistamce - case to sink

RQ (c-s)



-
-



K/kW


Double sided cooled *
Single sided cooled *


Thermal resistance - junction to case

RQ (j-s)



32
64



K/kW


Double sided cooled
Single sided cooled


Mounting force

F

10

20

-

kN


Weight

W



-

Kg

about

* Mounting surfaces smooth, flat and greased


Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data.

Sym

A

B

C

D

H

mm

59

34

53

3.5×3

26±1

For more information about High Frequency Thyristor please download the PDF file above named " YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts "
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