YZPST-BT131
Tip: include the part number, target voltage/current and application environment.
Downloads & technical files
BT131 Series 1A Triacs SOT-223
DESCRIPTION:
MAIN FEATURES:
symbol | value | unit |
IT(RMS) | 1 | A |
VDRM/VRRM | 600/800 | V |
VTM | ≤1.5 | V |
ABSOLUTE MAXIMUM RATINGS:
Parameter | Symbol | Value | Unit | |
Storage junction temperature range | Tstg | -40~150 | ℃ | |
Operating junction temperature range | Tj | -40~125 | ℃ | |
Repetitive peak off-state voltage (Tj=25℃) | VDRM | 600/800 | V | |
Repetitive peak reverse voltage (Tj=25℃) | VRRM | 600/800 | V | |
RMS on-state current | IT(RMS) | 1 | A | |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
16 |
A | |
I2t value for fusing (tp=10ms) | I2t | 1.28 | A2s | |
Critical rate of rise of on-state current (IG=2×IGT) |
dI/dt | Ⅰ-Ⅱ-Ⅲ | 50 |
A/μs |
Ⅳ | 10 | |||
Peak gate current | IGM | 2 | A | |
Average gate power dissipation | PG(AV) | 0.5 | W | |
Peak gate power | PGM | 5 | W | |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Parameter |
Test Condition |
Quadrant |
| Value |
Unit | |
T | D | |||||
IGT |
VD=12V, RL=33Ω | Ⅰ-Ⅱ-Ⅲ |
MAX | 3 | 5 | mA |
Ⅳ | 5 | 10 |
| |||
VGT | Ⅰ-Ⅱ-Ⅲ-Ⅳ | 1.3 | V | |||
VGD | VD=VDRM | Ⅰ-Ⅱ-Ⅲ-Ⅳ | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 5 | 7 | mA | |
IL |
IG=1.2IGT | Ⅰ-Ⅲ-Ⅳ |
MAX | 5 | 5 |
mA |
Ⅱ | 10 | 20 | ||||
dV/dt | VD=0.66×VDRM Tj=125℃ Gate open | MIN | 20 | 50 | V/µs | |
STATIC CHARACTERISTICS
Symbol | Test Condition | Value | Unit | ||
VTM | ITM=1.4A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
IDRM IRRM |
VDRM= VRRM | Tj=25℃ |
MAX | 5 | µA |
Tj=125℃ | 0.5 | mA | |||
THERMAL RESISTANCES
Symbol | Test Condition | Value | Unit | |
Rth(j-c) |
junction to case(AC) | TO-92 | 60 | ℃/W |
SOT-89/SOT-223 SOT-223-2L | 31 | ℃/W | ||
PACKAGE MECHANICAL DATA
For more information about YZPST-BT131 please download the PDF file above named " YZPST-BT131 "
Power semiconductor devices, protection components and industrial power solutions.
