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YZPST-600HFX170C6S IGBT Module
Tip: include the part number, target voltage/current and application environment.
Downloads & technical files
IGBT Module YZPST-600HFX170C6S
1700V/600A 2 in one-package
General Description
IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
. Low VCE(sat) Trench IGBT technology
. 10μs short circuit capability
. VCE(sat) with positive temperature coefficient
. Maximum junction temperature 175oC
. Low inductance case
. Fast & soft reverse recovery anti-parallel FWD
. Isolated copper baseplate using DBC technology
Typical Applications
. Inverter for motor drive
. AC and DC servo drive amplifier
. Uninterruptible power supply
IGBT
Symbol | Description | Value | Unit |
VCES | Collector-Emitter Voltage | 1700 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current TC=25oC TC= 100oC | 1069 600 | A |
ICM | Pulsed Collector Current tp=1ms | 1200 | A |
PD | Maximum Power Dissipation T =175oC | 4166 | W |
Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 1700 | V |
IF | Diode Continuous Forward Current | 600 | A |
IFM | Diode Maximum Forward Current tp=1ms | 1200 | A |
Module
Symbol | Description | Value | Unit |
Tjmax | Maximum Junction Temperature | 175 | oC |
Tjop | Operating Junction Temperature | -40 to +150 | oC |
TSTG | Storage Temperature Range | -40 to +125 | oC |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
IGBT Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| IC=600A,VGE=15V, Tj=25oC | 1.85 | 2.2 | ||||
| VCE(sat) | Collector to Emitter | IC=600A,VGE=15V, Tj=125oC | 2.25 | V | ||
| Saturation Voltage | IC=600A,VGE=15V, Tj=150oC | 2.35 | ||||
| VGE(th) | Gate-Emitter Threshold Voltage | IC= 12.0mA,VCE=VGE, Tj=25oC | 5.6 | 6.2 | 6.8 | V |
| ICES | Collector Cut-Off | VCE=VCES,VGE=0V, | 5 | mA | ||
| Current | Tj=25oC | |||||
| IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC | 400 | nA | ||
| RGint | Internal Gate Resistance | 1.3 | Ω | |||
| Cies | Input Capacitance | VCE=25V,f=1MHz, | 72.3 | nF | ||
| Cres | Reverse Transfer | VGE=0V | 1.75 | nF | ||
| Capacitance | ||||||
| QG | Gate Charge | VGE=- 15…+15V | 5.66 | μC | ||
| td(on) | Turn-On Delay Time | 170 | ns | |||
| tr | Rise Time | 67 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj=25oC | 527 | ns | ||
| tf | Fall Time | 138 | ns | |||
| Eon | Turn-On Switching | 154 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 132 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 168 | ns | |||
| tr | Rise Time | 80 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 125oC | 619 | ns | ||
| tf | Fall Time | 196 | ns | |||
| Eon | Turn-On Switching | 236 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 198 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 192 | ns | |||
| tr | Rise Time | 80 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 150oC | 640 | ns | ||
| tf | Fall Time | 216 | ns | |||
| Eon | Turn-On Switching | 259 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 215 | mJ | |||
| Loss | ||||||
| tP≤10μs,VGE=15V, | ||||||
| ISC | SC Data | Tj=150oC,VCC= 1000V, VCEM≤1700V | 2400 | A |
Package Dimensions
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