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YZPST-TG40E60
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Maximum Ratings
Symbol | Item | Ratings | Unit |
TG40E60 | |||
VDRM | Repetitive Peak Off-State Voltage | 600 | V |
Symbol | Item | Conditions | Ratings | Unit |
IT(RMS) | R.M.S. On-State Current | Tc =64℃ | 40 | A |
ITSM | Surge On-State Current | One cycle, 50/60Hz, peak value, non-repetitive | 380/420 | A |
I2t | I2t | Value for one cycle of surge current | 730 | A2s |
PGM | Peak Gate Power Dissipation |
| 10 | W |
PG(AV) | Average Gate Power Dissipation |
| 1 | W |
IGM | Peak Gate Current |
| 3 | A |
VGM | Peak Gate Voltage |
| 10 | V |
di/dt | Critical Rate of Rise of On-State Current | IG =100mA,VD = ½VDRM,diG/dt =1A/ μs | 50 | A/ μs |
Tj | Operating Junction Temperature |
| -40~+125 | ℃ |
Tstg | Storage Temperature |
| -40~+150 | ℃ |
VISO | Isolation Breakdown Voltage(R.M.S.) | A.C.1 minute | 2500 | V |
| Mounting Torque(M4) | Recommended Value 1.0~1.4N ・m(10~14kgf・㎝) | 1.5(15) | N・m (kgf・㎝) |
| Mass | Typical value | 23 | g |
Electrical Characteristics
Symbol | Item | Conditions | Ratings | Unit | |||
Min. | Typ. | Max. | |||||
IDRM | Repetitive Peak Off-State Current | Tj =125℃, VD =VDRM |
|
| 5 | mA | |
VTM | Peak On-State Voltage | IT =60A |
|
| 1.4 | V | |
I GT1 | 1 |
Gate Trigger Current |
VD =6V, IT =1A |
|
| 50 | mA |
I GT1 | 2 |
|
| 50 | mA | ||
I GT3 | 3 | ― | ― | ― | mA | ||
I GT3 | 4 |
|
| 50 | mA | ||
VGT1 | 1 |
Gate Trigger Voltage |
VD =6V, IT =1A |
|
| 1.5 | V |
VGT1 | 2 |
|
| 1.5 | V | ||
VGT3 | 3 | ― | ― | ― | V | ||
VGT3 | 4 |
|
| 1.5 | V | ||
VGD | Non-Trigger Gate Voltage | Tj =125℃, VD = ½VDRM | 0.2 |
|
| V | |
dv/dt | Critical Rate of Rise of Off-State Voltage | Tj =125℃, VD =⅔VDRM, Exponential wave. | 500 |
|
| V/ μs | |
〔dv/dt〕c | Critical Rate of Rise of Off-State Voltage at commutation | Tj =125℃, VD =⅔VDRM,〔di/dt〕c =10A/ms | 6 |
|
| V/ μs | |
IH | Holding Current |
|
| 30 |
| mA | |
Rth(j-c) | Thermal Impedance | Junction to case |
|
| 1.3 | ℃/W | |
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