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YZPST-GD450HFX170C6S IGBT Module
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IGBT Module
YZPST-450HFX170C6S
1700V/450A 2 in one-package
General Description
IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
Low VCE(sat) Trench IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175oC
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
IGBT
Symbol | Description | Value | Unit |
VCES | Collector-Emitter Voltage | 1700 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25oC @ TC= 100oC | 706 450 | A |
ICM | Pulsed Collector Current tp=1ms | 900 | A |
PD | Maximum Power Dissipation @ T =175oC | 2542 | W |
Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 1700 | V |
IF | Diode Continuous Forward Current | 450 | A |
IFM | Diode Maximum Forward Current tp=1ms | 900 | A |
Module
Symbol | Description | Value | Unit |
Tjmax | Maximum Junction Temperature | 175 | oC |
Tjop | Operating Junction Temperature | -40 to +150 | oC |
TSTG | Storage Temperature Range | -40 to +125 | oC |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
IGBT Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| IC=450A,VGE=15V, Tj=25oC | 1.85 | 2.2 | ||||
| VCE(sat) | Collector to Emitter | IC=450A,VGE=15V, Tj=125oC | 2.25 | V | ||
| Saturation Voltage | IC=450A,VGE=15V, Tj=150oC | 2.35 | ||||
| VGE(th) | Gate-Emitter Threshold Voltage | IC= 18.0mA,VCE=VGE, Tj=25oC | 5.6 | 6.2 | 6.8 | V |
| ICES | Collector Cut-Off | VCE=VCES,VGE=0V, | 5 | mA | ||
| Current | Tj=25oC | |||||
| IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC | 400 | nA | ||
| RGint | Internal Gate Resistance | 1.67 | Ω | |||
| Cies | Input Capacitance | VCE=25V,f=1MHz, | 54.2 | nF | ||
| Cres | Reverse Transfer | VGE=0V | 1.32 | nF | ||
| Capacitance | ||||||
| QG | Gate Charge | VGE=- 15…+15V | 4.24 | μC | ||
| td(on) | Turn-On Delay Time | 179 | ns | |||
| tr | Rise Time | 105 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC | 680 | ns | ||
| tf | Fall Time | 375 | ns | |||
| Eon | Turn-On Switching | 116 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 113 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 208 | ns | |||
| tr | Rise Time | 120 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 125oC | 784 | ns | ||
| tf | Fall Time | 613 | ns | |||
| Eon | Turn-On Switching | 152 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 171 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 208 | ns | |||
| tr | Rise Time | 120 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 150oC | 800 | ns | ||
| tf | Fall Time | 720 | ns | |||
| Eon | Turn-On Switching | 167 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 179 | mJ | |||
| Loss | ||||||
| tP≤10μs,VGE=15V, | ||||||
| ISC | SC Data | Tj=150oC,VCC= 1000V, VCEM≤1700V | 1800 | A |
Diode Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Diode Forward | IF=450A,VGE=0V,Tj=25oC | 1.8 | 2.25 | |||
| VF | Voltage | IF=450A,VGE=0V,Tj= 125oC | 1.95 | V | ||
| IF=450A,VGE=0V,Tj= 150oC | 1.9 | |||||
| Qr | Recovered Charge | VR=900V,IF=450A, | 105 | μC | ||
| IRM | Peak Reverse | -di/dt=4580A/μs,VGE=- 15V Tj=25oC | 198 | A | ||
| Recovery Current | ||||||
| Erec | Reverse Recovery Energy | 69 | mJ | |||
| Qr | Recovered Charge | VR=900V,IF=450A, | 187 | μC | ||
| IRM | Peak Reverse | -di/dt=4580A/μs,VGE=- 15V Tj= 125oC | 578 | A | ||
| Recovery Current | ||||||
| Erec | Reverse Recovery Energy | 129 | mJ | |||
| Qr | Recovered Charge | VR=900V,IF=450A, | 209 | μC | ||
| IRM | Peak Reverse | -di/dt=4580A/μs,VGE=- 15V Tj= 150oC | 585 | A | ||
| Recovery Current | ||||||
| Erec | Reverse Recovery Energy | 150 | mJ |
Package Dimensions
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