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YZPST-30TPS12
30TPS12 Thyristors P/N:YZPST-30TPS12
High Voltage 30TPS12 30A SCR TO-247
DESRCRIPTION:
The 30TPS12 High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.Typical applications are in input rectification (soft start) and these products are designed to be used with input diodes, switches and output rectifiers,which are available in identical package outlines.
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30TPS12 Thyristors P/N:YZPST-30TPS12
High Voltage 30TPS12 30A SCR TO-247
DESRCRIPTION:
The 30TPS12 High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.Typical applications are in input rectification (soft start) and these products are designed to be used with input diodes, switches and output rectifiers,which are available in identical package outlines.
Symbol
|
Symbol |
Value |
|
IGT |
≤35 mA |
|
IT(RMS) |
30 A |
|
VRRM |
1200 V |
ABSOLUTE MAX I MUM RATINGS (TC = 25°C, unless otherwise specified)
|
Symbol |
PARAMETER |
Value |
Unit |
|
V DRM |
Repetitive peak off-state voltage (Tj =25℃) |
1200 |
V |
|
VRRM |
Repetitive peak reverse voltage (Tj=25℃) |
1200 |
V |
|
IT(AV) |
Average on-state current (180° conduction angle) |
20 |
A |
|
IT(RMS) |
RMS on-state current(full sine wave) |
30 |
A |
|
ITSM |
Non repetitive surge peak on-state current (180° conduction angle, F=50Hz ，TC=85℃) |
300 |
A |
|
I2t |
I2t for Fusing (t = 10 ms) |
450 |
A2s |
|
dI /dt |
Critical rate of rise of on-state current (I =2 ×IGT, tr ≤ 100 ns) |
50 |
A/μs |
|
IGM |
Peak Gate Current |
4 |
A |
|
PG(AV) |
Average Gate Power dissipation |
1 |
W |
|
Tstg |
Storage junction temperature range |
-40 ~ 150 |
°C |
|
TJ |
Operating junction temperature range |
-40 ~ 125 |
°C |
ELECTRICAL CHARACTERISTICS (Tj = 25。C, unless otherwise specified)
| Symbol | Test Condition | Value | Unit | |
| Min | Max | |||
| IGT | V = 12V R =33Ω | 35 | mA | |
| VGT | 1.3 | V | ||
| VGD | VD=VDRM Tj=125℃ | 0.2 | V | |
| IL | IG= 1.2IGT | 180 | mA | |
| IH | IT=500mA | 120 | mA | |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | 500 | V/μs | |
| VTM | ITM =45A tp=380μs | 1.7 | V | |
| IDRM | VD=VDRM VR=VRRM | 20 | μA | |
| IRRM | 4 | mA | ||
PACKAGE MECHANICAL DATA
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