YZPST-FR1000AX50
Features:
- All Diffused Structure
- Interdigitated Amplifying Gate Configuration
- Blocking capabilty up to 2500 volts
- Guaranteed Maximum Turn-Off Time
- High dV/dt Capability
- Pressure Assembled Device
Blocking - Off State
Device Type |
VDRM (1) |
VDSM (1) |
FR1000AX50 |
2500 |
2500 |
Repetitive peak off state leakage |
IDRM
|
20 mA
80mA (3)
|
Critical rate of voltage rise |
dV/dt (4) |
700 V/msec |
Conducting - on state
Parameter |
Symbol |
|
Max. |
Typ. |
Units |
Conditions |
RMS value of on-state current |
ITRMS |
|
1550 |
|
A |
Nominal value |
IT(AV) |
1000
|
|
A |
Continuous single-phase,half sine wave,180°conduction |
||
Peak one cycle surge
(non repetitive) current
|
ITSM |
|
14000 |
|
A |
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
|
I square t |
I2t |
|
8.2.x105 |
|
A2s |
8.3 msec and 10.0 msec |
RNS reverse currrnt |
IR(RMS) |
|
630 |
|
A |
|
Average reverse current |
IR(AV) |
|
400 |
|
A |
Continuous single-phase,half sine wave,180°conduction |
Peak on-state voltage |
VTM |
|
2.2 |
|
V |
ITM=1000A Tj = 125 oC |
Peak reverse voltage |
VRM |
|
4.0 |
|
V |
IRM=1200A, Tj = 125 oC |
Critical rate of rise of on-state
current
|
di/dt |
|
300 |
|
A/ms |
VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=125℃ |
Critical rate of decrease of reverse conmmutating current |
(di/dt)C |
|
200 |
|
A/ms |
ITM=4000A,tw=60us,IRM=4000A,dv/dt=700V/us,VDM=1/2VDRN,Tj=125℃,Saturable reactor7500v.us |
ELECTRICAL CHARACTERISTICS AND RATINGS (cont.)
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
8 |
|
W |
|
Peak gate current |
IGM |
|
10 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
350 |
|
mA |
VD = 6 V;RL = 2 ohms;Tj = +25 oC |
Gate voltage required to trigger all units
|
VGT |
|
4
|
|
V |
VD = 6 V;RL = 2 ohms;Tj = 25oC |
Peak non- trigger voltage |
VGD |
|
0.2 |
|
V |
Tj = 125 oC;VD=1/2VDRM |
Dynamic
Parameter |
Symbol |
Max. |
Typ. |
Units |
Conditions |
|
tq |
|
50
|
|
ms |
ITM =4000 A; di1/dt = -200A/ms;
di2/dt=50A/us,IRM=500A; dV/dt =700 V/ms VDR=1250V
Tj = 125 oC;tw=60us
|
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thyristor part thermal resistance - junction to fin |
RQⅠ (j-f) |
|
0.022 |
|
oC/W |
Double sided cooled |
Diode part thermal resistamce – junction to fin |
RQⅢ (j-f) |
|
0.070 |
|
oC/W |
Double sided cooled |
Mounting force |
P |
|
45 |
|
kN |
|
Weight |
W |
|
670 |
|
g |
|
* Mounting surfaces smooth, flat and greased
CASE OUTLINE AND DIMENSIONS.
FR1000AX50 Reverse-conducting Thyristor

YZPST can provide Following Equivalent List of Reverse Conducting Thyristors (Capsule Types)
Type | IF(AV) | VRR M |
IFSM
@TVJM
&10ms
|
IRRM (max) &Tj= TVJM | VTM(max) | trr(max) | Tvj | Rthjc | F±10% | |
A | V | KA | IFM(A) | V | µs | V | °C | K/W | KN | |
SHR400R22(21)
(CSR328)
|
240 | 1300 | 5600 | 40 | 500 | 2.3 | 3 | 125 | 0.08 | 16 |
FR600AW
(AX)
|
150 | 2500 | 3500 | 50 | 1200 | 4 | 3 | 125 | 0.03 | 26 |
FR1000BX(BW) | 400 | 2500 | 6000 | 100 | 1200 | 4 | 4 | 125 | 0.022 | 40 |
TP909FC | 400 | 2500 | 6000 | 100 | 1000 | 2.6 | 4 | 125 | 0.02 | 33 |
TP978FC | 400 | 2400 | 6000 | 100 | 1000 | 2.6 | 4 | 125 | 0.021 | 33 |