YZPST-FD1000A
Features:
. All Diffused Structure
. High Surge rating
. Blocking capabilty up to2800volts
. Soft Reverse Recovery
. Rugged Ceramic Hermetic Package
. Pressure Assembled Device
Reverse Blocking
Device Type |
VRRM (1) |
VRSM (1) |
FD1000A50 |
2500 |
2800 |
FD1000A56 |
2800 |
3100 |
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage |
IRRM
|
10 mA 50 mA (3) |
Conducting - on state
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IF(AV) |
|
1000 |
|
A |
Sinewave,180o conduction,Tc =100oC |
RMS value of on-state current |
IFRMS |
|
1570 |
|
A |
Nominal value |
Peak one cycle surge (non repetitive) current |
IFSM |
|
25000
|
|
A
|
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 175 oC |
I square t |
I2t |
|
2.6x105 |
|
A2s |
10 msec |
Peak on-state voltage |
VFM |
|
1.65 |
|
V |
IFM =2500 A; Duty cycle £ 0.01%; Tj = 160 oC
|
Reverse Recovery Current (4) |
IRM(REC) |
|
250 |
|
A |
IFM = 1000 A; dIF/dt = 10 A/ms, Tj = 160 oC |
Reverse Recovery Charge (4) |
Qrr |
|
* |
|
mC |
|
Reverse Recovery Time (4) |
tRR |
|
* |
|
ms |
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+150 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c)
|
|
0.023
|
|
oC/W |
Double sided cooled
|
|
Thermal resistance - case to sink |
RQ (c-s) |
|
0.010
|
|
oC/W |
Double sided cooled *
|
|
Mounting force |
P |
|
24 |
|
kN |
|
|
Weight |
W |
|
|
600 |
g |
|
For more information about rectifier please download the PDF file above named " YANGZHOU POSITIONING TECH CO Power thyristor and diode parts "