YZPST-BD139-16
NPN SILICON TRANSISTOR P/N:YZPST-BD139-16
BD139-16 NPN silicon transistor complementary PNP types are the BD140-16
DESCRIPTION
The BD139-16 is silicon epitaxial planar NPN transistors
in Jedec TO-126 plastic package, designed for audio
amplifiers and drivers utilizing complementary or quasi
compementary circuits.
The complementary PNP types are the BD140-16
NPN SILICON TRANSISTOR P/N:YZPST-BD139-16
BD139-16 NPN silicon transistor complementary PNP types are the BD140-16
DESCRIPTION
The BD139-16 is silicon epitaxial planar NPN transistors
in Jedec TO-126 plastic package, designed for audio
amplifiers and drivers utilizing complementary or quasi
compementary circuits.
The complementary PNP types are the BD140-16
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-Base Voltage |
VCBO |
80 |
V |
|
Collector-Emitter Voltage |
VCEO |
80 |
V |
|
Emitter-Base Voltage |
VEBO |
5.0 |
V |
|
Collector Current |
IC |
1.5 |
A |
|
Base Current |
IB |
0.5 |
A |
|
Total Dissipation at |
Ptot |
12.5 |
W |
|
Max. Operating Junction Temperature |
Tj |
150 |
oC |
|
Storage Temperature |
Tstg |
-55~150 |
oC |
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Collector Cut-off Current | ICBO | VCB = 80V, IE = 0 | 10 | μA | ||
| — | — | |||||
| Emitter Cut-off Current | IEBO | |||||
| VEB = 5.0V, IC = 0 | 10 | μA | ||||
| VCEO | ||||||
| Collector-Emitter Sustaining Voltage | IC = 1.0mA, IB = 0 | 80 | — | — | V | |
| VCE = 2.0V, IC = 0.15A | 100 | 250 | ||||
| DC Current Gain | hFE | |||||
| VCE = 2.0V, IC = 0.5A | 100 | — | — | |||
| VCE(sat) | ||||||
| Collector-Emitter Saturation Voltage | IC = 0.5A, IB = 0.05A | 0.5 | V | |||
| VBE | ||||||
| Base-Emitter Voltage | IC = 0.5A, VCE = 2.0V | 1 | V | |||
| fT | ||||||
| Transition Frequency | VCE = 5V,IC = 50mA | 80 | MHz |
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