2.引⼊SDK 在⽤户站点项⽬中引⼊SDK,并初始化 SDK 配置 直接复制粘贴到对应网站的 head 或者 body 标签内 ==============以下是针对设备的
YZPST-MKP0.22 UF-1500VDC

YZPST-MKP0.22 UF-1500VDC

YZPST-MKP0.22 UF-1500VDC  Capacitor
Technical Parameters
1.Product specfications and sizes are shown in the table below :
Product apeclicaton Rated capeclty Rated yoltage Dimenslons(mm) Bolt of the botlom
(Cn) (Un) φD φD1 H
0.22μF-1500VDC 0.22μF 1500VDC 35 38 65 M8×10
2.Capactance toloranco:-5%~+5%.
3.Rated froquoncy:50Hz.
4. Interelectrode insulating medium: Hlgh temperature polypropylene film .
5.Filling matorialog: PU Rosin (Dry type) .
6.Extreme tost voltage: 1.5UN 10s .
7.Extrems shell tost voltago : 4000Vac 10s .
8. Dlelectric dleslpation factor ( too ) :≤2x10(1V100H 20℃).
9. Intemal safoty device : ln lts intermal sottings overvoltage protectlve devics .
10. Matorial of shel: AlumInum case.
11. Perfom standard: IEC61071: 2017.
YZPST-MKP0.22 UF-1500VDC
description1
Zipper closure 1/5 zip athletic pullovers for men. Stretchy, lightweight, fast-drying fabric for superior performance. REGULAR FIT - US standard sizes. An athletic fit that sits close to the body for a wide range of motion, designed for optimal performance and all day comfort. FEATURES - Quarter zip closure;Thumbholes on long sleeves to keep them in place during workout
Product description

PIM with Trench Field-Stop lGBT, Emitter Controlled Diode and NTC

YZPST-P035PJE120AT1B

Features

Trench+Field Stop Technology

1200V Trench Field-Stop IGBT

LowVCE(sat)with Low Switching Losses

Applications

Frequency Coverters

Motor Drives

Auxiliary Inverters

Equivalent Circuit Schematic

IGBT-Inverter

Maximum Rated Values

Symbo

Description

Conditions

Values

Unit

VCES

Collector-Emitter Voltage

Ty=25℃

1200

V

VGEs

Gate-Emitter Peak Voltage

Ty=25℃

±20

V

Ic

Continuous DC Collector Current

Tc=100℃

35

A

CRM

Repetitive Peak Collector Current

tp=1ms

70

A

Ptot

Total Power Dissipation

Tc=25℃,Tyimax=175℃

172

W

Characteristic Values

Symbo

 

Description

 

Conditions

Values

 

Unit

Min

Typ.

Max.

VcE(sat)

Collector-Emitter Saturation Voltage

VGE=15V,Ic=35A,Ty=25℃

 

2.15

 

V

VGE=15V,Ic=35A,Tv=125℃

 

2.57

 

V

VgE(th

Gate Threshold Voltage

VGE=VcE,c=1.2mA

 

5.6

 

V

CES

Collector-Emitter Cut-Off Current

VcE=1200V,VGE=0V

 

 

1

mA

GES

Gate-Emitter Leakage Current

VGE=20V,VcE=0V

 

 

100

nA

Cies

Input Capacitance

 

VcE=25V,VGE=OV,f=1MHz

 

2590

 

pF

Coes

Output Capacitance

 

180

 

pF

Cres

Reverse Transfer Capacitance

 

86

 

pF

td(on)

Turn-on Delay Time

 

VcE=600V  VGF=±15V Ic=35A

Rg=120

Inductive Load Ty=25℃

 

34

 

ns

t

Turn-on Rise Time

 

20

 

ns

td(off)

Turn-off Delay Time

 

230

 

ns

t

Turn-off Fall Time

 

160

 

ns

Eon

Turn-on Switching Loss

 

2.5

 

mJ

Eoff

Turn-off Switching Loss

 

2.5

 

mJ

lsc

Short Circuit Data

VGE≤15V,Vcc=800V  tp≤10μs,Tv=150℃

 

151

 

A

RthJC

Thermal Resistance,Junction to Case

Per IGBT

 

 

0.87

K/W

Tw OF

Virtual JunctionTemperature

Under Switching

-40

 

150

Package Outlines (mm)

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