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YZPST-P150HFN120AT1R6

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YZPST-P150HFN120AT1R6

P/N:YZPST-P150HFN120AT1R6

62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

Features

■ Low Switching Losses

■ LoW VcEsal

■ Low VcE(sat with Positive Temperature Coefficient

Applications

■ Motor Drives

UPS Systems

■ High Power Inverter

Equivalent Circuit Schematic

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Tel: 008613805278321

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YZPST-P150HFN120AT1R6

YZPST-P150HFN120AT1R6_V1.0-I007.pdf

description1

Zipper closure 1/5 zip athletic pullovers for men. Stretchy, lightweight, fast-drying fabric for superior performance. REGULAR FIT - US standard sizes. An athletic fit that sits close to the body for a wide range of motion, designed for optimal performance and all day comfort. FEATURES - Quarter zip closure;Thumbholes on long sleeves to keep them in place during workout

DESCRIPTION

P/N:YZPST-P150HFN120AT1R6

62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

Features

■ Low Switching Losses

■ LoW VcEsal

■ Low VcE(sat with Positive Temperature Coefficient

Applications

■ Motor Drives

UPS Systems

■ High Power Inverter

Equivalent Circuit Schematic

IGBT -Inverter

Maximum Rated Values

Symbol	Description	Conditions	Values	Unit
VcEs	Collector-Emitter Voltage	Tv=25℃	1200	V
VGEs	Gate-Emitter Peak Voltage	Ty=25℃	±20	V
lc	Continuous DC Collector Current	Tc=100℃	150	A
CRM	Repetitive Peak Collector Current	tp=1ms	300	A
Ptot	Total Power Dissipation	Tc=25℃,Tyjmax=175℃	1500	W

Characteristic Values

Symbol			Values
Symbol	Description	Conditions	Min.	Typ.	Max.	Unit
VcE(sat	Collector-Emitter Saturation Voltage	VcE=15V,Ic=150A,Tv=25℃		2.2		V
VcE(sat	Collector-Emitter Saturation Voltage	Vge=15V,Ic=150A,Tv=125℃		2.5		V
VgE(th	Gate Threshold Voltage	VgE=VcE,Ic=3.8mA	5	5.8	6.5	V
IcEs	Collector-Emitter Cut-Off Current	VcE=1200V,VgE=0V				mA
GES	Gate-Emitter Leakage Current	VcE=20V,VcE=0V			600	nA
RGint	Internal Gate Resistor	Ty=25℃		3.8		Ω
Cies	Input Capacitance			11.5		nF
Coes	Output Capacitance	Vce=25V,Vce=0V,f=1MHz		1		nF
Cres	Reverse Transfer Capacitance			0.4		nF
tt(on)	Turn-on Delay Time			139		ns
tt(on)	Turn-on Delay Time	Vcc=600V		139		ns
t	Turn-on Rise Time	VoE=±15V		37		nS
d(a)	Turn-off Delay Time	Ic=150A		192		nS
t	Turn-off Fall Time	Rg=2.0g		128		nS
Eon	Turn-on Switching Loss	Inductive Load		7.9	-=	mJ
E₀ff	Turn-off Switching Loss	Ty=25℃		8.4		mJ
Isc	Short Circuit Data	VcE≤15V,Vcc=600V		518		A
Isc	Short Circuit Data	tp≤10μs,Tv=25℃		518		A
	Thermal Resistance,Junction to Case	Per IGBT	—--	0.1	—--	K/W
Twop	Virtual Junction Temperature	Under Switching	-40		150	℃

Diode -Inverter

Maximum Rated Values

Symbol	Description	Conditions	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	Tv=25℃	1200	V
lF	Continuous DC Forward Current		150	A
lFRM	Repetitive Peak Collector Current	tp=1ms	300	A

Characteristic Values

Symbol			Values
Symbol	Description	Conditions	Min.	Typ	Max.	Unit
	Forward Voltage	lr=150A,Vse=0V,Tv=25℃		2.5		V
VF	Forward Voltage	l=150A,Vge=0V,Tv=125℃		1.9	—--	V
RM	Peak Reverse Recovery Current		—--	42		A
Qr	Recovered Charge	l=150A,Vg=600V,Vge=-15V		3.1		uC
Erec	Reverse Recovery Energy	Ty=25℃		1.1		mJ
Tuop	Virtual Junction Temperature	Under Switching	-40		150	℃

Package Outlines(mm)

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