2.引⼊SDK 在⽤户站点项⽬中引⼊SDK,并初始化 SDK 配置 直接复制粘贴到对应网站的 head 或者 body 标签内 ==============以下是针对设备的
YZPST-P150HFN120AT1R6

YZPST-P150HFN120AT1R6

P/N:YZPST-P150HFN120AT1R6

62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

Features

■   Low  Switching   Losses

■    LoW    VcEsal

■  Low  VcE(sat  with  Positive  Temperature  Coefficient

Applications

■  Motor  Drives

    UPS   Systems

■  High  Power  Inverter

Equivalent Circuit Schematic

description1
Zipper closure 1/5 zip athletic pullovers for men. Stretchy, lightweight, fast-drying fabric for superior performance. REGULAR FIT - US standard sizes. An athletic fit that sits close to the body for a wide range of motion, designed for optimal performance and all day comfort. FEATURES - Quarter zip closure;Thumbholes on long sleeves to keep them in place during workout
DESCRIPTION


P/N:YZPST-P150HFN120AT1R6

62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

Features

■   Low  Switching   Losses

■    LoW    VcEsal

■  Low  VcE(sat  with  Positive  Temperature  Coefficient

Applications

■  Motor  Drives

    UPS   Systems

■  High  Power  Inverter

Equivalent Circuit Schematic

IGBT -Inverter

Maximum   Rated   Values

Symbol

Description

Conditions

Values

Unit

VcEs

Collector-Emitter Voltage

Tv=25℃

1200

V

VGEs

Gate-Emitter Peak Voltage

Ty=25℃

±20

V

lc

Continuous DC Collector Current

Tc=100℃

150

A

CRM

Repetitive Peak Collector Current

tp=1ms

300

A

Ptot

Total Power Dissipation

Tc=25℃,Tyjmax=175℃

1500

W

Characteristic Values

Symbol Values
Description Conditions Min. Typ. Max. Unit
VcE(sat Collector-Emitter Saturation Voltage VcE=15V,Ic=150A,Tv=25℃ 2.2 V
Vge=15V,Ic=150A,Tv=125℃ 2.5 V
VgE(th Gate Threshold Voltage VgE=VcE,Ic=3.8mA 5 5.8 6.5 V
IcEs Collector-Emitter Cut-Off Current VcE=1200V,VgE=0V mA
GES Gate-Emitter Leakage Current VcE=20V,VcE=0V 600 nA
RGint Internal Gate Resistor Ty=25℃ 3.8 Ω
Cies Input Capacitance 11.5 nF
Coes Output Capacitance Vce=25V,Vce=0V,f=1MHz 1 nF
Cres Reverse Transfer Capacitance 0.4 nF
tt(on) Turn-on Delay Time 139 ns
Vcc=600V
t Turn-on Rise Time VoE=±15V 37 nS
d(a) Turn-off Delay Time Ic=150A 192 nS
t Turn-off Fall Time Rg=2.0g 128 nS
Eon Turn-on Switching Loss Inductive Load 7.9 -= mJ
Eff Turn-off Switching Loss Ty=25℃ 8.4 mJ
Isc Short Circuit Data VcE≤15V,Vcc=600V 518 A
tp≤10μs,Tv=25℃
Thermal Resistance,Junction to Case Per IGBT —-- 0.1 —-- K/W
Twop Virtual Junction Temperature Under Switching -40 150

Diode   -Inverter

Maximum Rated Values

Symbol

Description

Conditions

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

Tv=25℃

1200

V

lF

Continuous DC Forward Current

 

150

A

lFRM

Repetitive Peak Collector Current

tp=1ms

300

A

Characteristic Values

Symbol Values
Description Conditions Min. Typ Max. Unit
Forward Voltage lr=150A,Vse=0V,Tv=25℃ 2.5 V
VF l=150A,Vge=0V,Tv=125℃ 1.9 —-- V
RM Peak Reverse Recovery Current —-- 42 A
Qr Recovered Charge l=150A,Vg=600V,Vge=-15V 3.1 uC
Erec Reverse Recovery Energy Ty=25℃ 1.1 mJ
Tuop Virtual Junction Temperature Under Switching -40 150

Package        Outlines(mm)

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