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SOT-223 Z0103MN Standard 1A triac
Standard 1A Triacs P/N:YZPST-Z0103MN0
Features
On-state rms current, IT(RMS) 1 A
Repetitive peak off-state voltage, V DRM/VRRM 800 V
Triggering gate current, IGT (Q1) 3 to 25 mA
Description
The Z01 series is suitable for general purpose AC switching applications. These devices are
typically used in applications such as home
appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...
Different gate current sensitivities are available, allowing optimized performance when driven
directly through microcontrollers.
Standard 1A Triacs P/N:YZPST-Z0103MN0
Features
On-state rms current, IT(RMS) 1 A
Repetitive peak off-state voltage, V DRM/VRRM 800 V
Triggering gate current, IGT (Q1) 3 to 25 mA
Description
The Z01 series is suitable for general purpose AC switching applications. These devices are
typically used in applications such as home
appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...
Different gate current sensitivities are available, allowing optimized performance when driven
directly through microcontrollers.
Table 1. Absolute maximum ratings
|
Symbol |
Parameter |
Value |
Unit |
||
|
IT(RMS) |
On-state rms current (full sine wave) |
SOT-223 |
T tab = 90 °C |
1 |
A |
|
TO-92 |
TL = 50 °C |
||||
|
SMBflat-3L |
T tab = 107 °C |
||||
|
ITSM |
Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) |
F = 50 Hz |
t = 20 ms |
8 |
A |
|
F = 60 Hz |
t = 16.7 ms |
8.5 |
|||
|
I²t |
I²t Value for fusing |
tp = 10 ms |
0.35 |
² A s |
|
|
dI/dt |
Critical rate of rise of on-state current IG = 2 x I GT , tr ≤ 100 ns |
F = 120 Hz |
Tj = 125 °C |
20 |
A/µs |
|
IGM |
Peak gate current |
tp = 20 µs |
Tj = 125 °C |
1 |
A |
|
PG(AV) |
Average gate power dissipation |
Tj = 125 °C |
1 |
W |
|
|
Tstg Tj |
Storage junction temperature range Operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C |
||
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
|
Symbol |
Test conditions |
Quadrant |
|
Z01 |
Unit |
|||
|
03 |
07 |
09 |
10 |
|||||
|
I GT (1) |
VD = 12 V, RL = 30 Ω |
I - II - III |
MAX. |
3 |
5 |
10 |
25 |
mA |
|
IV |
5 |
7 |
10 |
25 |
||||
|
VGT |
ALL |
MAX. |
1.3 |
V |
||||
|
VGD |
VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C |
ALL |
MIN. |
0.2 |
V |
|||
|
IH (2) |
IT = 50 mA |
MAX. |
7 |
10 |
10 |
25 |
mA |
|
|
IL |
IG = 1.2 I GT |
I - III - IV |
MAX. |
7 |
10 |
15 |
25 |
mA |
|
II |
15 |
20 |
25 |
50 |
||||
|
dV/dt (2) |
VD = 67% V DRM gate open Tj = 110 °C |
MIN. |
10 |
20 |
50 |
100 |
V/µs |
|
|
(dV/dt)c (2) |
(dI/dt)c = 0.44 A/ms, Tj = 110 °C |
MIN. |
0.5 |
1 |
2 |
5 |
V/µs |
|
- MinimumI GT is guaranteed at 5% of IGT max.
- For both polaritiesof A2 referenced to A1.
Table 3. Static characteristics
| Symbol | Test conditions | Value | Unit | ||
| VTM(1) | ITM = 1.4 A, tp = 380 µs | Tj = 25 °C | MAX. | 1.6 | V |
| V to (1) | Threshold voltage | Tj = 125 °C | MAX. | 0.95 | V |
| Rd (1) | Dynamic resistance | Tj = 125 °C | MAX. | 400 | mΩ |
| I DRM | V DRM = VRRM | Tj = 25 °C | MAX. | 5 | µA |
| IRRM | Tj = 125 °C | 0.5 | mA | ||
- For both polaritiesof A2 referenced to A1.
Table 4. Thermal resistances
| Symbol | Parameter | Value | Unit | |||
| Rth(j-t) | Junction to tab (AC) | SOT-223 | 25 | |||
| Rth(j-t) | Junction to tab (AC) | SMBflat-3L | 14 | |||
| Rth(j-I) | Junction to lead (AC) | TO-92 | 60 | |||
| S(1) = 5 cm² | SOT-223 | MAX. | 60 | °C/W | ||
| Rth(j-a) | Junction to ambient | SMBflat-3L | 75 | |||
| TO-92 | 150 | |||||
- S =copper surface under tab.
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