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YZPST-BTW69-1200
YZPST-BTW69-1200 SCRs
High current density due to double mesa technology.
series of silicon controlled TO-P3(insulated)
rectifiers are specifically designed for high power switching and phase control applications.
series are suitable for general purpose applications, a high gate sensitvity is required.
provides a 2500V RMS isolation voltage from all three terminalsto extemal heetsink.
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DESCRIPTION
YZPST-BTW69-1200 SCRs
High current density due to double mesa technology.
series of silicon controlled TO-P3(insulated)
rectifiers are specifically designed for high power switching and phase control applications.
series are suitable for general purpose applications, a high gate sensitvity is required.
provides a 2500V RMS isolation voltage from all three terminalsto extemal heetsink.
MAIN FEATURES
| Symbol | Value | Unit |
| IT(RMS) | 50 | A |
| IGT | ≤80 | mA |
| VTM | ≤1.8 | V |
| Parameter | Symbol | Value | Unit | |
| Storage junction temperature range | Tstg | -40 to +150 | ℃ | |
| Operrating junction temperature range | Tj | -40 to +125 | ℃ | |
| Repetitive Peak Off-state Voltage Tj=25℃ Repetit ve Peak Reverse Voltage Tj=25℃ |
VDRM VRRM |
V | ||
| BTW69-1200 | 1200 | |||
| RMS on-state current (all conduction angels) | TO-P3 Tc=80℃ | IT(RMS) | 50 | A |
| Average on-state current (half sine wave) | TO-P3 Tc=80℃ | IT(AV) | 40 | A |
| Non repelitive surge peak on-state current (half sine cycle,Tj=25℃) |
f=50 Hz t=10ms | ITSM | 520 | A |
| f=60 Hz t=8.3ms | 540 | |||
| I²t Value for fusing | tp=10ms | I²t | 1350 | A²s |
| Repetitive rate of rise of on-state current after triggering ITM=20A IG=50mA dlc/dt 50mA/ms |
dl/dt | 150 | Aμs | |
| Peak gate current tp=20us,Tj=125℃ | IGM | 1.5 | A | |
| Peak gate power tp=20us,Tj=125℃ | PGM | 10 | W | |
| Average gate power dissipation Tj=125℃ | PG(AV) | 2 | W | |
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