YZPST-MS38N100
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YZPST-MS38N100

Power MOSFET

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

VDSS = 1000V

ID25 = 38A

RDS(on) ≤ 210mΩ

trr ≤ 300ns

Features

 International Standard Package

 Low Intrinsic Gate Resistance

 miniBLOC with Aluminum Nitride Isolation

 Low Package Inductance

 Fast Intrinsic Rectifier

 Low RDS(on)  and QG

Advantages

 High Power Density

 Easy to Mount

 Space Savings

Applications

 DC-DC Converters

 Battery Chargers

 Switch-Mode and Resonant-Mode Power Supplies

 AC Motor Control

 High Speed Power Switching Appliccation

description1
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Product Introduction

Power MOSFET

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

VDSS = 1000V

ID25 = 38A

RDS(on) ≤ 210mΩ

trr ≤ 300ns

Features

 International Standard Package

 Low Intrinsic Gate Resistance

 miniBLOC with Aluminum Nitride Isolation

 Low Package Inductance

 Fast Intrinsic Rectifier

 Low RDS(on)  and QG

Advantages

 High Power Density

 Easy to Mount

 Space Savings

Applications

 DC-DC Converters

 Battery Chargers

 Switch-Mode and Resonant-Mode Power Supplies

 AC Motor Control

 High Speed Power Switching Appliccation

Symbol Test Conditions Maximum Ratings  
VDSS TJ      = 25℃ to 150℃                                                      1000 V
                                    
VDGR TJ     = 25℃ to 150℃, RGS  = 1MΩ 1000 V
VGSS Continuous 土30 V
VGSM Transient 土40 V
ID25 TC   = 25℃ 38 A
IDM TC   = 25℃, Pulse Width Limited by TJM 120 A
       
I A TC = 25℃ 19 A
EAS TC = 25℃ 2 J
dv/dt IS     < IDM , VDD  < VDSS , TJ  < 150℃ 20 V/ns
PD T   = 25℃ 1000 W
TJ   -55 ... +150
TJM   150
TSTG   -55 ... +150
       
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
       
  I ISOL £ 1mA, t = 1s 3000 V~
       
MD Mounting Torque for Base Plate 1.5/13 1.3/11.5 Nm/lb.in Nm/Ib.in
  Terminal Connection Torque    
Weight   30 g

SOT-227B (IXFN) Outline

 

 

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