+86 13815834128
info@yzpst.net
Weiheng Building NO.184 Wangyue RD Yangzhou Jiangsu, China

YZPST-MT3-500-36-D

Home > Products > Semiconductor Device > Module > Thyristor-Thyristor Module > YZPST-MT3-500-36-D

Products

Hot Product

YZPST-A1237NC280

YZPST-R0929LC10 (TQ_10US)

YZPST-C712L

YZPST-T171-320-10

YZPST-FR1000AX50

YZPST-MT3-500-36-D

Email: info@yzpst.net

Tel: 8613815834128

Whatsapp: 8613815834128

YZPST-MT3-500-36-D

YZPST-模块MT3-500-36-D-I018 (1).pdf

YANGZHOU POSITIONING TECH CO Power thyristor and diode parts 20200518.pdf

description1

Zipper closure 1/5 zip athletic pullovers for men. Stretchy, lightweight, fast-drying fabric for superior performance. REGULAR FIT - US standard sizes. An athletic fit that sits close to the body for a wide range of motion, designed for optimal performance and all day comfort. FEATURES - Quarter zip closure;Thumbholes on long sleeves to keep them in place during workout

Dual Thyristor Modules Features And Typical Applications

http://www.youtube.com/channel/UCZ3mV8GmGNcX4WcYEoWX-_g/featured

Features

· Heat transfer through aluminium nitride ceramic isolated metal baseplate

· Precious metal pressure contacts for high reliability

Typical Applications

· DC motor control

· Temperature control

· Professional light dimming

Maximum Ratings

Symbol	Condition	Ratings	Unit
I_T(AV)	Single phase，half wave，sin 180° conduction ;T_C=85°C	500	A
I_TRMS	Single phase，half wave，sin 180° conduction ;T_C=85°C	785	A
I_TSM	T_j=125°C	18	kA
I²t	T_j=125°C	1620	kA²S
V_DRM/V_RRM	T_j=125°C	3600/3600	V
di/dt	non-repetitive	400	A/us
V_iso	A.C.1minute/1S	3000/3600	V
T_j		-40 ~ + 125	°C
T_stg		-40 ~ + 125	°C
W	About	-	Kg

For more information about Dual thyristor module please download the PDF file above named " YANGZHOU POSITIONING TECH CO Power thyristor and diode parts "

Electrical Characteristics

http://www.youtube.com/channel/UCZ3mV8GmGNcX4WcYEoWX-_g/featured

Symbol	Condition	Ratings	Unit
I_DRM /I_RRM	AtV_DRM，Single phase，half wave，T_j=125°C	250	mA
V_TM	On-State Current 1570A，T_j=25°C	1.85	V
V_T(TO)	T_j=125°C	1.10	V
r_T	T_j=125°C	0.40	mΩ
R_K1G1		-	Ω
R_K2G2		-	Ω
t_gd	T_j=25°C;V_D=0.4V_DRM; I_TM=I_TAV	3	us
t_q	dv_D/dt=50V/us;T_j=125°C; I_TM=I_TAV	400	us
I_GT/V_GT	T_j=25°C，I_T=1A，V_D=6V	300 / 2.5	mA/V
V_GD	V_D=67%V_DRM	0.35	V
DV/DT	V_D=67%V_DRM	1000	V/us
I_H	T_j=25°C	300	mA
I_L	T_j=25°C	1500	mA
R_th(j-c)	Thermal resistance Junction to case	0.025	°C/W
R_th(_c_-_h₎	Thermal resistance case to heatsink	0.008	°C/W

For more information about Dual thyristor module please download the PDF file above named " YANGZHOU POSITIONING TECH CO Power thyristor and diode parts "

CONTACT US

Inquiry