YZPST-QM3N150C Fast switching 1500V N-Channel MOSFET
Tip: include the part number, target voltage/current and application environment.
Downloads & technical files
1500V N-Channel MOSFET
YZPST-QM3N150C
General Description
This Power MOSFET is produced using advanced
self- aligned planar technology. This advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices can be used in various power switching
circuit for system miniaturization and higher efficiency.
Features
3A, 1500V, RD5(on)typ. = 50@VGS= 10 V ld=1.5A
Low gate charge (typical 37nC)
Low reverse transfer capacitance (typical2.8pf)
Fast switching
100% avalanche tested
Absolute Maximum Ratings Tc=25 Cunles otherwise noted
| Symbol | Parameter | YZPST-QM3N150C | Units | |
| Voss | Drain-Source Voltage | 1500 | V | |
| lo | Drain Current | Continuous(Tc=25℃) | 3 | A |
| Continuous(Tc=100℃) | 1.8 | A | ||
| loM | Drain Current - Pulsed (Note 1) | 12 | A | |
| VGss | Gate-Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 225 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5 | V/ns | |
| Po | Power Dissipation(Tc=25℃) | 32 | W | |
| T,Tsts | Operating anc Storage Temperature Range | -55 to+150 | ℃ | |
| Tt | Maximum lead temperature for soldering purposes 1/8" frome case for 5 seconds | 300 | ℃ | |
TO-3PH Package lInformation
For more information aboutYZPST-QM3N150C-G320 please download the PDF file above named " YZPST-QM3N150C-G320 "
Power semiconductor devices, protection components and industrial power solutions.
