PRODUCT VISUAL01 / GALLERY
POWER COMPONENT
YZPST-RH55N30T
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P/N: YZPST-RH55N30T
Logic-LeveI Gate Drive
Advanced process TechnoIogy
Dynamic dv/dt Rating
175℃ operating TemperatUre
Fast switching
FUIIyAvaIanche Rated
Lead-Free
RF Power MOSFET - 30MHz
V DSS=55V
RDS(on)=0.035Ω
ID=30A
AbsoIute Maximum Ratings
| parameter | Max. | units | |
| ID @ Tc = 25。c | continuous Drain current, VGS @ 10V | 30 | |
| ID @ Tc = 100。c | continuous Drain current, VGS @ 10V | 21 | |
| A | |||
| IDM | PuIsed Drain current 0① | 110 | |
| PD @Tc = 25。c | Power Dissipation | 68 | w |
| Linear Derating Factor | 0.45 | w/。c | |
| VGS | Gate-to-source VoItage | ±16 | V |
| EAS | singIe PuIse AvaIanche Energy ② | 110 | mJ |
| IAR | AvaIanche current① | 16 | A |
| EAR | Repetitive AvaIanche Energy① | 6.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt ③ | 5 | V/ns |
| TJ | operating Junction and | -55 to + 175 | |
| storage Temperature Range | 。c | ||
| TSTG | |||
| soIdering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting torque, 6-32 or M3 screw. | 10 Ibf.in (1.1N.m) |
ThermaI Resistance
| parameter | Min. | TYP. | Max. | units | |
| RθJc | Junction-to-case | 一一一一 | 一一一一 | 2.2 | ℃/W |
| RθcS | case-to-sink, FIat, Greased surface | 一一一一 | 0.5 | 一一一一 | |
| RθJA | Junction-to-Ambient | 一一一一 | 一一一一 | 62 |
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Power semiconductor devices, protection components and industrial power solutions.
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