YZPST-MJ15003
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Absolute maximum ratings(Ta=℃)
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VCBO | Collector-base voltage | Open emitter | 140 | V |
VCEO | Collector-emitter voltage | Open base | 140 | V |
VEBO | Emitter-base voltage | Open collector | 5 | V |
IC | Collector current |
| 20 | A |
IB | Base current |
| 5 | A |
IE | Emitter current |
| -25 | A |
PD | Total power dissipation | TC=25℃ | 250 | W |
Tj | Junction temperature |
| 200 | ℃ |
Tstg | Storage temperature |
| -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal resistance junction to case | 0.7 | ℃/W |
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-emitter sustaining voltage | IC=0.2A ;IB=0 | 140 |
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| V |
VCEsat | Collector-emitter saturation voltage | IC=5A; IB=0.5A |
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| 1.0 | V |
VBE | Base-emitter on voltage | IC=5A ; VCE=2V |
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| 2.0 | V |
ICEO | Collector cut-off current | VCE=140V; IB=0 |
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| 0.25 | mA |
ICEX | Collector cut-off current | VCE=140V; VBE(off)=1.5V TC=150℃ |
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| 0.1 2.0 | mA |
IEBO | Emitter cut-off current | VEB=5V; IC=0 |
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| 0.1 | mA |
hFE | DC current gain | IC=5A ; VCE=2V | 25 |
| 150 |
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Is/b |
Second breakdown collector current With base forward biased | VCE=50Vdc,t=1 s, Nonrepetitive | 5 |
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A |
VCE=100Vdc,t=1 s, Nonrepetitive | 1 | |||||
COB | Output capacitance | IE=0 ; VCB=10V;f=1.0MHz |
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| 1000 | pF |
fT | Transition frequency | IC=0.5A ; VCE=10V;f=0.5MHz | 2 |
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| MHz |
PACKAGE OUTLINE
Power semiconductor devices, protection components and industrial power solutions.
