Symbol

Parameter

Test Conditions

Values

Unit

VRRM

Maximum Repetitive Reverse Voltage

1600

V

VRSM

Maximum Non-Repetitive Reverse Voltage

1700

V

ID

Average Forward Current

TC=85(62)°C

130(160)

A

IFSM

Non-Repetitive        Surge

Forward Current

50Hz/60Hz

1130/1180

A

I2t

I2t (For Fusing)

50Hz/60Hz

6400/5800

A2s

VF(TO)1

Low level value of   threshold voltage

16.7%* π*IF(AV) < I <   π *IF(AV),TCJ= 150°C

0.78

V

VF(TO)2

High level value of   threshold voltage

I >  π*IF(AV),TCJ=150°C

0.99

V

rf1

Low level value of forward slope resistance

16.7%* π*IF(AV) < I <   π *IF(AV),TCJ= 150°C

4.59

m Ω

rf2

High level value of forward slope resistance

I >  π*IF(AV),TCJ=150°C

4.17

m Ω

VISO

Isolation Voltage @AC1s

50Hz

3000

V

TJ

Junction Temperature

-40 to +150

°C

TSTG

Storage Temperature Range

-40 to +150

°C

Md

To heatsink (M6)

4~6

N·m

To terminals (M5)

3~4

N·m

RθJC

Maximum thermal resistance, Junction to case

DC operation per module

0.16

°C/W

DC operation per junction

0.93

120 。rect. Per module

0.18

120 。rect. Per junction

1.08

Rθcs

Case to heatsink

Per module

0.03

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IRRM

TC= 150°C

10

mA

VFM

Forward Voltage Drop

IF =200A, TJ=25°C

1.63

V