YZPST-BYV28-200
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YZPST-BYV28-200

P/N:YZPST-BYV28-200
SINTERED GLASS JUNCTION
ULTRAFAST AVALANCHE RECTIFIER
VOLTAGE :200V CURRENT: 3.5A
FEATURE
Glass passivated
High maximum operating temperature Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
MECHANICAL DATA
Case: SOD-64 sintered glass case
Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C
Polarity: color band denotes cathode end Mounting position: any
YZPST-BYV28-200
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DESCRIPTION


P/N:YZPST-BYV28-200

SINTERED GLASS JUNCTION

ULTRAFAST AVALANCHE RECTIFIER

VOLTAGE :200V CURRENT: 3.5A

FEATURE

Glass passivated

High maximum operating temperature Low leakage current

Excellent stability

Guaranteed avalanche energy absorption capability

MECHANICAL DATA

Case: SOD-64 sintered glass case

Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C

Polarity: color band denotes cathode end Mounting position: any

MAXIMUM  RATINGS  AND  ELECTRICAL  CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25C, unless otherwise stated)

 

SYMBOL

BYV28-200

units

Maximum Recurrent Peak Reverse Voltage

VRRM

200

V

Maximum RMS Voltage

VRMS

140

V

Maximum DC blocking Voltage

VDC

200

V

Reverse avalanche breakdown voltage

at IR = 0.1 mA

V(BR)R

220min

V

Maximum  Average   Forward  Rectified  Current   3/8” lead length at Ttp =85C

IFAV

3.5

A

Non-repetitive Peak Forward Current at t=10ms half sine wave

IFSM

90

A

Maximum Forward Voltage at Forward Current 3.5A

VF

1.02

V

Non-repetitive peak reverse avalanche energy

(Note 1)

ERSM

20

mJ

Maximum DC Reverse Current at rated DC blocking voltage

Ta =25C Ta =165C

IR

5.0   150.0

μA

Maximum Reverse Recovery Time                 (Note 2)

Trr

25

nS

Diode Capacitance                                           (Note 3)

Cd

190

pF

Typical Thermal Resistance                            (Note 4)

Rth(ja)

75

K/W

Storage and Operating Junction Temperature

Tstg, Tj

-65 to +175

C

Note:

1. R=400mA; Tj=Tjmax prior to surge; inductive load switched off

2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

3. Measured at 1.0 MHz and applied reverse voltage of  0Vdc

4.  Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer40 μm

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