YZPST-BYV28-200

P/N:YZPST-BYV28-200
SINTERED GLASS JUNCTION
ULTRAFAST AVALANCHE RECTIFIER
VOLTAGE :200V CURRENT: 3.5A
FEATURE
Glass passivated
High maximum operating temperature Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
MECHANICAL DATA
Case: SOD-64 sintered glass case
Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C
Polarity: color band denotes cathode end Mounting position: any

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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25。C, unless otherwise stated) |
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SYMBOL |
BYV28-200 |
units |
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Maximum Recurrent Peak Reverse Voltage |
VRRM |
200 |
V |
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Maximum RMS Voltage |
VRMS |
140 |
V |
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Maximum DC blocking Voltage |
VDC |
200 |
V |
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Reverse avalanche breakdown voltage at IR = 0.1 mA |
V(BR)R |
220min |
V |
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Maximum Average Forward Rectified Current 3/8” lead length at Ttp =85。C |
IFAV |
3.5 |
A |
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Non-repetitive Peak Forward Current at t=10ms half sine wave |
IFSM |
90 |
A |
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Maximum Forward Voltage at Forward Current 3.5A |
VF |
1.02 |
V |
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Non-repetitive peak reverse avalanche energy (Note 1) |
ERSM |
20 |
mJ |
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Maximum DC Reverse Current at rated DC blocking voltage |
Ta =25。C Ta =165。C |
IR |
5.0 150.0 |
μA |
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Maximum Reverse Recovery Time (Note 2) |
Trr |
25 |
nS |
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Diode Capacitance (Note 3) |
Cd |
190 |
pF |
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Typical Thermal Resistance (Note 4) |
Rth(ja) |
75 |
K/W |
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Storage and Operating Junction Temperature |
Tstg, Tj |
-65 to +175 |
。C |
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Note: 1. R=400mA; Tj=Tjmax prior to surge; inductive load switched off 2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc 4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer≥40 μm |
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