YZPST-2SB888
TO-92 Plastic-Encapsulate Transistors
P/N: YZPST-2SB888
PNP Epitaxial Planar Silicon Darlington Transistor
Applications
Motor drivers, printer hammer drivers, relay drivers, votlage regulator control.
Features
High DC current gain (5000 or greater).
Large current capacity and wide ASO.
Low saturation voltage : VCE(sat)=–0.8V typ.
Absolute Maximum Ratings at Ta = 25˚C
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
|
VCBO |
Collector-to-Base Voltage |
|
–80 |
V |
|
V CEO |
Collector-to-Emitter Voltage |
|
–50 |
V |
|
VEBO |
Emitter-to-Base Voltage |
|
–10 |
V |
|
IC |
Collector Current |
|
–0.7 |
A |
|
ICP |
Collector Current (Pulse) |
|
–2 |
A |
|
PC |
Allowable Collector Dissipation |
|
600 |
mW |
|
Tj |
Junction Temperature |
|
150 |
˚C |
|
Tstg |
Storage Temperature |
|
–55 to +150 |
˚C |
Electrical Characteristics at Ta = 25˚C
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
||
|
min |
typ |
max |
||||
|
ICBO |
Collector Cutoff Current |
V CB=–40V, IE=0 |
|
|
–0.1 |
µA |
|
IEBO |
Emitter Cutoff Current |
VEB=–8V, IC=0 |
|
|
–0.1 |
µA |
|
h FE1 |
DC Current Gain |
VCE=–2V, IC=–50mA |
5000 |
|
|
|
|
h FE2 |
VCE=–2V, IC=–500mA |
3000 |
|
|
|
|
|
fT |
Gain-Bandwidth Product |
VCE=–5V, IC=–50mA |
|
170 |
|
MHz |
|
Cob |
Output Capacitance |
V CB=–10V, f=1MHz |
|
16 |
|
pF |
|
VCE(sat) |
Collector-to-Emitter Saturation Voltage |
IC=–100mA, IB=–0.1mA |
|
–0.8 |
–1.2 |
V |
|
V BE(sat) |
Base-to-Emitter Saturation Voltage |
IC=–100mA, IB=–0.1mA |
|
–1.3 |
–2.0 |
V |
|
V(BR)CBO |
Collector-to-Base Breakdown Voltage |
IC=–10µA, IE=0 |
–80 |
|
|
V |
|
V(BR)CEO |
Collector-to-Emitter Breakdown Voltage |
IC=–1mA, R BE=∞ |
–50 |
|
|
V |
|
V(BR)EBO |
Emitter-to-Base Breakdown Voltage |
IE=–10µA, IC=0 |
–10 |
|
|
V |
