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YZPST-IDW20G120C5BFKSA1 (YZPST-RD20120T)
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YZPST-IDW20G120C5BFKSA1 (YZPST-RD20120T)

YZPST-IDW20G120C5BFKSA1 (YZPST-RD20120T)

SiC Schottky Diode

Features

Zero Forward Recovery Voltage

Zero Reverse Recovery Current

Excellent Surge Current Capability

Temperature Independent Switching

Positive Temperature Coefficient on VF

High Frequency Operation

Benefits

Increased Power Density

Essentially no Switching Losses

Reduction of Heat Sink Requirements

Higher Efficiency

Reduced EMI

Applications

Uninterruptible Power Supplies

Switch Mode Power Supplies

Power Factor Correction

Motor Drivers

Email: info@yzpst.net

Tel: 008613805278321

Whatsapp: 8613805278321

YZPST-IDW20G120C5BFKSA1 (YZPST-RD20120T)
YZPST-RD20120T-IDW20G120C5BFKSA1- SiC SBD 20A 1200V TO247 AC -I1927.pdf
description1
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DESCRIPTION


YZPST-IDW20G120C5BFKSA1 (YZPST-RD20120T)

SiC Schottky Diode

Features

Zero Forward Recovery Voltage

Zero Reverse Recovery Current

Excellent Surge Current Capability

Temperature Independent Switching

Positive Temperature Coefficient on VF

High Frequency Operation

Benefits

Increased Power Density

Essentially no Switching Losses

Reduction of Heat Sink Requirements

Higher Efficiency

Reduced EMI

Applications

Uninterruptible Power Supplies

Switch Mode Power Supplies

Power Factor Correction

Motor Drivers

Maximum ratings (Tj=25℃ unless otherwise specified)

Symbol

Parameter

Test conditions

Value

Unit

VRRM

Repetitive peak reverse voltage

 

1200

V

VRSM

Surge peak reverse voltage

 

1200

V

IF

Continuous forward current

TC=25°C   TC=155°C

35*/70** 10*/20**

A

IFSM

Non-Repetitive forward surge current

TC=25°C , tp=10ms, Half Sine Wave

105*

A

IFRM

Repetitive Peak Forward Surge Current

TC=25°C , tp=10ms, Half Sine Wave

60*

A

∫i2dt

i2t value

TC=25°C , tp=10ms

55.1*

A2S

Ptot

Power dissipation

TC=25°C   TC=110°C

197* 85*

W

Tj

Operating junction temperature

 

-55~175

°C

Tstg

Storage temperature

 

-55~175

°C

Package Outlines

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