YZPST-S4A010120A
P/N:YZPST-S4A010120A SiC Schottky Diode
Silicon Carbide Schottky Diode
Features
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Positive Temperature Coefficient on VF
Temperature-independent Switching
175°C Operating Junction Temperature
Benefits
Replace Bipolar with Unipolar Device
Reduction of Heat Sink Size
Parallel Devices Without Thermal Runaway
Essentially No Switching Losses
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor drive, PV Inverter, Wind Power Station
P/N:YZPST-S4A010120A SiC Schottky Diode
Silicon Carbide Schottky Diode
Features
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Positive Temperature Coefficient on VF
Temperature-independent Switching
175°C Operating Junction Temperature
Benefits
Replace Bipolar with Unipolar Device
Reduction of Heat Sink Size
Parallel Devices Without Thermal Runaway
Essentially No Switching Losses
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor drive, PV Inverter, Wind Power Station
Maximum Ratings
| Symbol | Parameter | Value | Unit | TestConditions | Note |
| VRRM | RepetitivePeak ReverseVoltage | 1200 | V | TC = 25C | |
| VRSM | Surge Peak Reverse Voltage | 1200 | V | TC = 25C | |
| VR | DC BlockingVoltage | 1200 | V | TC = 25C | |
| 30 | TC ≤ 25C | ||||
| IF | Forward Current | 14 | A | TC ≤ 135C | |
| 10 | TC ≤ 150C | ||||
| IFSM | Non-RepetitiveForwardSurge Current | 95 | A | TC = 25C, tp = 8.3ms, Half Sine Wave | |
| Ptot | Power Dissipation | 150 | W | TC = 25C | Fig.3 |
| TC | MaximumCaseTemperature | 150 | C | ||
| TJ , TSTG | OperatingJunction andStorageTemperature | -55 to175 | C | ||
| TO-220 Mounting Torque | 1 | Nm | M3 Screw |
Electrical Characteristics
| Symbol | Parameter | Typ. | Max. | Unit | TestConditions | Note |
| VF | Forward Voltage | 1.55 | 1.8 | V | IF = 10A,TJ = 25C | Fig.1 |
| 2.2 | 2.5 | IF = 10A,TJ = 175C | ||||
| Reverse Current | 2 | 20 | µA | VR = 1200V, TJ= 25C | Fig.2 | |
| IR | 10 | 200 | VR = 1200V, TJ= 175C | |||
| 650 | VR = 0V, TJ= 25C, f = 1MHz VR = 400V, TJ = 25C, f =1MHz VR = 800V, TJ = 25C, f =1MHz | |||||
| C | Total Capacitance | 49 | / | pF | Fig.5 | |
| 40 | ||||||
| TotalCapacitive Charge | / | nC | VR = 800V,IF = 10A | Fig.4 | ||
| C | 29 | di/dt = 200A/µs, TJ= 25C |
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