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YZPST-S4A010120A
Tip: include the part number, target voltage/current and application environment.
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P/N:YZPST-S4A010120A
Silicon Carbide Schottky Diode
Features
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Positive Temperature Coefficient on VF
Temperature-independent Switching
175°C Operating Junction Temperature
Benefits
Replace Bipolar with Unipolar Device
Reduction of Heat Sink Size
Parallel Devices Without Thermal Runaway
Essentially No Switching Losses
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor drive, PV Inverter, Wind Power Station
Maximum Ratings
Symbol | Parameter | Value | Unit | Test Conditions | Note |
vRRM | Repetitive Peak Reverse Voltage | 1200 | V | TC = 25C | |
vRSM | Surge Peak Reverse Voltage | 1200 | V | TC = 25C | |
vR | DC Blocking Voltage | 1200 | V | TC = 25C | |
IF | Forward Current | 30 14 10 | A | TC ≤ 25C TC ≤ 135C TC ≤ 150C | |
IFSM | Non-Repetitive Forward Surge Current | 95 | A | TC = 25C, tp = 8.3ms, Half Sine Wave | |
Ptot | Power Dissipation | 150 | W | TC = 25C | Fig.3 |
TC | Maximum Case Temperature | 150 | C | ||
TJ , TSTG | Operating Junction and Storage Temperature | -55 to 175 | C | ||
TO-220 Mounting Torque | 1 | Nm | M3 Screw |
Electrical Characteristics
Symbol | Parameter | Typ. | Max. | Unit | Test Conditions | Note |
VF | Forward Voltage | 1.55 2.2 | 1.8 2.5 | V | IF = 10A, TJ = 25C IF = 10A, TJ = 175C | Fig.1 |
IR | Reverse Current | 2 10 | 20 200 | µA | VR = 1200V, TJ = 25C VR = 1200V, TJ = 175C | Fig.2 |
C | Total Capacitance | 650 49 40 | / | pF | VR = 0V, TJ = 25C, f = 1MHz VR = 400V, TJ = 25C, f = 1MHz VR = 800V, TJ = 25C, f = 1MHz | Fig.5 |
| C | Total Capacitive Charge | 29 | / | nC | VR = 800V, IF = 10A di/dt = 200A/µs, TJ = 25C | Fig.4 |
Package Dimensions
Package TO-220-2
Power semiconductor devices, protection components and industrial power solutions.
