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YZPST-IDW20G120C5BFKSA1 (YZPST-RD20120T)
Tip: include the part number, target voltage/current and application environment.
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YZPST-IDW20G120C5BFKSA1 (YZPST-RD20120T)
SiC Schottky Diode
Features
Zero Forward Recovery Voltage
Zero Reverse Recovery Current
Excellent Surge Current Capability
Temperature Independent Switching
Positive Temperature Coefficient on VF
High Frequency Operation
Benefits
Increased Power Density
Essentially no Switching Losses
Reduction of Heat Sink Requirements
Higher Efficiency
Reduced EMI
Applications
Uninterruptible Power Supplies
Switch Mode Power Supplies
Power Factor Correction
Motor Drivers
Maximum ratings (Tj=25℃ unless otherwise specified)
Symbol | Parameter | Test conditions | Value | Unit |
VRRM | Repetitive peak reverse voltage |
| 1200 | V |
VRSM | Surge peak reverse voltage |
| 1200 | V |
IF | Continuous forward current | TC=25°C TC=155°C | 35*/70** 10*/20** | A |
IFSM | Non-Repetitive forward surge current | TC=25°C , tp=10ms, Half Sine Wave | 105* | A |
IFRM | Repetitive Peak Forward Surge Current | TC=25°C , tp=10ms, Half Sine Wave | 60* | A |
∫i2dt | i2t value | TC=25°C , tp=10ms | 55.1* | A2S |
Ptot | Power dissipation | TC=25°C TC=110°C | 197* 85* | W |
Tj | Operating junction temperature |
| -55~175 | °C |
Tstg | Storage temperature |
| -55~175 | °C |
Package Outlines
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Power semiconductor devices, protection components and industrial power solutions.
