YZPST-RGN65C035

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650V Super-GaN FET in TO-247
Features
● Easy to drive—compatible with standard gate drivers
● Low conduction and switching losses
● Low Qrr of 175nC—no free-wheeling diode required
● GSD pin layout improves high speed design
● JEDEC-qualified GaN technology
● RoHS compliant and Halogen-free

Benefits
● Increased efficiency through fast switching
● Increased power density
● Reduced system size and weight
● Enables more efficient topologies—easy to implement bridgeless totem-pole designs
● Lower BOM cost

Applications
● Renewable energy
● Industrial
● Automotive
● Telecom and datacom
● Servo motors

Key Specifications
VDS (V) min	650
VTDS (V) max	800
RDS(on) (mΩ) max	41
Qrr (nC) typ	175
Qg (nC) typ	28

Absolute Maximum Ratings (TC =25°C unless otherwise stated)

Symbol	Parameter	Limit Value	Unit
ID25°C	Continuous drain current @TC=25 °C a	50	A
ID100°C	Continuous drain current @TC=100 °C a	31.5	A
IDM	Pulsed drain current (pulse width: 10µs)	240	A
VDSS	Drain to source voltage	650	V
VTDS	Transient drain to source voltage b	800	V
VGSS	Gate to source voltage	±18	V
PD25 °C	Maximum power dissipation	178	W
TJ	Operating junction temperature	-55 to +150	°C
TS	Storage temperature	-55 to +150	°C
TCSOLD	Soldering peak temperature c	260	°C