YZPST-RGN800C05D5

Gate

Drain

Kelvin Source

Source

8

1, 2, 3, 4

7

5, 6, 9

Parameter

Value

Unit

VDS,max

800

V

RDS(on),max @ VGS = 6 V

480

mΩ

QG,typ @ VDS  = 400 V

1.3

nC

ID,pulse

9

A

QOSS @ VDS  = 400 V

10.5

nC

Qrr @ VDS  = 400 V

0

nC

Parameter

Symbol

Values

Unit

Note/Test Condition

Drain source voltage

VDS, max

800

V

VGS = 0 V,

Tj = -55 °C to 150 °C

Drain source voltage transient 1

VDS, transient

800

V

VGS = 0 V

Drain source voltage, pulsed 2

VDS, pulse

750

V

Tj = 25 °C; total time < 10 h

Tj = 125 °C; total time < 1 h

Continuous current, drain source

ID

5

A

Tc = 25 °C

Pulsed current, drain source 3

ID, pulse

9

A

Tc = 25 °C; VGS  = 6 V; tPULSE = 10 µs

Pulsed current, drain source 3

ID, pulse

5

A

Tc = 125 °C; VGS  = 6 V; tPULSE = 10 µs

Gate source voltage, continuous 4

VGS

-1.4 to +7

V

Tj = -55 °C to 150 °C

Gate source voltage, pulsed

VGS, pulse

-20 to +10

V

Tj = -55 °C to 150 °C;

tPULSE  = 50 ns, f = 100 kHz; open drain

Power dissipation

Ptot

40

W

Tc = 25 °C

Operating temperature

Tj

-55 to +150

。C

Storage temperature

Tstg

-55 to +150

。C

Parameter

Symbol

Values

Unit

Note/Test Condition

Thermal resistance, junction-ambient

RthJA 1

72

°C/W

Thermal resistance, junction-case

RthJC

3.05

°C/W

Thermal resistance, junction-ambient

Tsold

260

°C

MSL3

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Gate threshold voltage

VGS(th)

1.2

1.7

2.5

V

ID = 5.2 mA; VDS = VGS ; Tj = 25 °C

-

1.9

-

ID = 5.2 mA; VDS = VGS ; Tj = 150 °C

Drain-source leakage current

IDSS

-

0.2

10

µA

VDS = 700 V; VGS  = 0 V; Tj = 25 °C

-

2

-

VDS = 700 V; VGS  = 0 V; Tj = 150 °C

Gate-source leakage current

IGSS

-

20

-

µA

VGS = 6 V; VDS  = 0 V

Drain-source on-state resistance

RDS(on)

-

365

480

mΩ

VGS = 6 V; ID = 2 A; Tj = 25 °C

-

790

-

mΩ

VGS = 6 V; ID = 2 A; Tj = 150 °C

Gate resistance

RG

-

14

-

Ω

f = 5 MHz; open drain

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Input capacitance

Ciss

-

43

-

pF

VGS  = 0 V; VDS  = 400 V; f = 100 kHz

Output capacitance

Coss

-

13

-

pF

VGS  = 0 V; VDS  = 400 V; f = 100 kHz

Reverse transfer capacitance

Crss

-

0.1

-

pF

VGS  = 0 V; VDS  = 400 V; f = 100 kHz

Effective output capacitance, energy related 1

Co(er)

-

18

-

pF

VGS  = 0 V; VDS  = 0 to 400 V

Effective output capacitance, time related 2

Co(tr)

-

26

-

pF

VGS  = 0 V; VDS  = 0 to 400 V

Output charge

QOSS

-

10.5

-

nC

VGS  = 0 V; VDS  = 0 to 400 V

Turn-on delay time

td(on)

-

2

-

ns

VDS  = 400 V; ID  = 4 A; L = 318 µH; VGS  = 6 V; Ron  = 10 Ω; Roff  = 2 Ω;   See Figure 22

Turn-off delay time

td(off)

-

3

-

ns

Rise time

tr

-

5

-

ns

Fall time

tf

-

7

-

ns

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Gate charge

QG

-

1.3

-

nC

VGS  = 0 to 6 V; VDS  = 400 V; ID  = 2 A

Gate-source charge

QGS

-

0.1

-

nC

Gate-drain charge

QGD

-

0.5

-

nC

Gate Plateau Voltage

VPlat

-

2.7

-

V

VDS  = 400 V; ID  = 2 A

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Source-Drain reverse voltage

VSD

-

2.8

-

V

VGS  = 0 V; IS  = 2 A

Pulsed current, reverse

IS, pulse

-

-

9

A

VGS = 6 V; tPULSE  = 10 µs

Reverse recovery charge

Qrr

-

0

-

nC

IS =2 A; VDS  = 400 V

Reverse recovery time

trr

-

0

-

ns

Peak reverse recovery current

Irrm

-

0

-

A