65R72GF N-channel Power MOSFET as replacement of STW48N60M2
N-channel Power MOSFET
Type:YZPST-65R72GF
| PRODUCT SUMMARY | |
| Vds (V) at Tj max. | 700 |
| Rds(ofi)max. at 25°C (mQ) | Vgs=10V 72 |
| Qg max. (nC) | 130 |
| Qgs (nC) | 30 |
| Qgd (nC) | 34 |
| Configuration | single |
Features
Fast Body Diode MOSFET
|D=47A(Vgs=10V)
Ultra Low Gate Charge
Improved dv/dt Capability
RoHS compliant
Applications
Switching Mode Power Supplies (SMPS)Server and Telecom Power Supplies
Welding& Battery Chargers
Solar(PV Inverters)
AC/DC Bridge Circuits
| ORDERING INFORMATION | |
| Device | YZPST-65R72GF |
| Device Package | TO-247 |
| Marking | 65R72GF |
| ABSOLUTE MAXIMUM RATINGS (Tc=25oC, unless otherwise noted) | |||
| Parameter | Symbol | Limit | Unit |
| Drain to Source Voltage | Vdss | 650 | V |
| Continuous Drain Current (@Tc=25°C) | Id | 47⑴ | A |
| Continuous Drain Current (@Tc=100°C) | 29⑴ | A | |
| Drain current pulsed (2) | Idm | 138⑴ | A |
| Gate to Source Voltage | Vgs | ±30 | V |
| Single pulsed Avalanche Energy(3) | Eas | 1500 | mJ |
| MOSFET dv/dt ruggedness (@VDS=0~400V) | dv/dt | 25 | V/ns |
| Peak diode Recovery dv/dt ⑷ | dv/dt | 15 | V/ns |
| Total power dissipation (@Tc=25°C) | Pd | 417 | W |
| Derating Factor above 25°C | 3.34 | w/°c | |
| Operating Junction Temperature & StorageTemperature | Tstg, Tj | -55to + 150 | °C |
| Maximum lead temperature for soldering purpose | Tl | 260 | °C |
Notes
1. Drain current is limited by maximum junction temperature.
2. Repetitive rating : pulse width limited by junction temperature.
3 L = 37mH, lAS = 9A, VDD = 50V, RG=25Q, Starting at Tj = 25°C
4. ISD < lD, di/dt = WOA/us, VDD < BVDSS, Starting at Tj =25°C
For more information about YZPST-65R72GF please download the PDF file above named " YZPST-65R72GF"
