YZPST-KP641-16E
HIGH POWER THYRISTOR ASSEMBLY FOR PHASE CONTROL APPLICATIONS
YZPST-KP641-16E
Features:
. All Diffused Structure
. Amplifying Gate Configuration
. Blocking capabilty up to 1600 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
|
Parameter |
Symbol |
Maximu m Limits |
Units |
Conditions |
|
Repetitive peak reverse voltage |
V RRM |
1600 |
V |
|
|
Repetitive peak off state voltage |
V DRM |
1600 |
V |
|
|
Average value of on-state current |
I T(AV) |
641 |
A |
Sinewave,180 o conduction,T sink =70 ℃ |
|
Peak one cycle surge (non repetitive) current |
I TSM |
9900 |
A |
10.0 msec (50Hz), sinusoidal wave-shape, 180 o conduction, T j = 125 ℃ |
|
|
I RRM |
30 |
mA |
Tj = 125 ℃ |
|
|
I DRM |
30 |
mA |
Tj = 125 ℃ |
|
Peak on-state voltage |
V TM |
1.5 |
V |
Tj = 125 ℃ ITM=1000A |
|
Threshold voltage |
V T(TO) |
0.99 |
V |
T j =1 25 ℃ |
|
Slope resistance |
r T |
0.52 |
mΩ |
T j =1 25 ℃ |
|
Average gate power dissipation |
P G(AV) |
3 |
W |
|
|
Gate current |
I GT |
300 |
mA |
V D = 6 V;R L = 3 ohms;T j = +25 ℃ |
|
Gate voltage |
V GT |
3.5 |
V |
V D = 6 V;R L = 3 ohms;T j = 0-125 ℃ |
|
Latching current |
I L |
1000 |
mA |
V D = 24 V; R L = 12 ohms |
|
Holding current |
I H |
300 |
mA |
V D = 24 V; I = 2.5 A |
|
Critical rate of voltage rise |
dV/dt |
1000 |
V/s |
VD=2/3VDRM |
|
Critical rate of rise of on-state current |
di/dt |
200 |
A/ s |
Switching from V DRM 1000 V, non-repetitive |
|
Operating temperature |
T |
-30-125 |
℃ |
|
|
Storage temperature |
T stg |
-30-125 |
℃ |
|
CASE OUTLINE AND DIMENSIONS.
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