Parameter

Symbol

Value

Unit

Collector-Emitter Breakdown Voltage

VCE

650

V

DC collector current, limited by Tjmax TC = 25°C

TC = 100°C

IC

80

40

A

Diode Forward current, limited by Tjmax TC = 25°C

TC = 100°C

IF

80

40

A

Continuous Gate-emitter voltage

VGE

±20

V

Transient Gate-emitter voltage

VGE

±30

V

Turn off safe operating area VCE ≤650V, Tj ≤ 175°C, tp = 1μs

-

120

A

Pulse  collector current, VGE  = 15V, tp  limited by Tjmax

ICM

120

A

Power dissipation , Tj=25°C

Ptot

188

W

Operating junction temperature

Tj

-40...+175

°C

Storage temperature

TS

-55...+150

°C

Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s

-

260

°C

Mounting torque, M3 screw Maximum of mounting processes: 3

M

0.6

Nm

Parameter

Symbol

Max. Value

Unit

IGBT thermal resistance, junction - case

Rθ(j-c)

0.8

K/W

Diode thermal resistance, junction - case

Rθ(j-c)

1.1

K/W

Thermal resistance, junction - ambient

Rθ(j-a)

40

K/W