YZPST-T1205

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YZPST-T1205

YANGZHOU POSITIONING TECH CO Power thyristor and diode parts 20200518.pdf

YZPST-T1205 TO-263--B027.pdf

description1

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Product Description

http://www.youtube.com/channel/UCZ3mV8GmGNcX4WcYEoWX-_g/featured

MAIN FEATURES

Symbol	Value	Unit
I_T(RMS)	12	A
V_DRM V_RRM	600	V
V_TM	1.55	V

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~150

℃

Operating junction temperature range

Tj

-40~125

℃

Repetitive peak off-state voltage (T =25℃)

V_DRM

600

V

Repetitive peak reverse voltage (T =25℃)

V_R_RM

600

V

RMS on-state current

I_T(RMS)

12

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

I_TSM

120

A

I²t value for fusing (tp=10ms)

I²t

78

A²S

Critical rate of rise of on-state current

(I =2×I_GT)

dI/dt

50

A/μS

Peak gate current

I_GM

4

A

Average gate power dissipation

P_G(AV)

1

W

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Inquiry

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40 ~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (T =25℃)	V_DRM	600	V
Repetitive peak reverse voltage (T =25℃)	V_R_RM	600	V
RMS on-state current	I_T(RMS)	12	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	I_TSM	120	A
I²t value for fusing (tp=10ms)	I²t	78	A²S
Critical rate of rise of on-state current (I =2×I_GT)	dI/dt	50	A/μS
Peak gate current	I_GM	4	A
Average gate power dissipation	P_G(AV)	1	W