YZPST-BT152-600R-2326

YZPST-BT152-600R-2326

BT152-600R/800R

Table glass passivation process 600V BT152-600R TO-220 SCR

YZPST-BT152-600R

  • Product features
    Silicon unilateral device NPNP four layer structure,
    P+ on the through diffusion isolation,
    Single mesa structure (Single Mesa),
    Table glass passivation process,
    The back   (anode)   electrode metal: Ti-Ni-Ag
    The high ability of   current shock resistance

    ●The main purposes
    Alternating current switch,
    AC DC power converter,
    The control of electric heating
    Motor speed control
    ● Package
    TO-220M1    TO-220F
description1
Zipper closure 1/5 zip athletic pullovers for men. Stretchy, lightweight, fast-drying fabric for superior performance. REGULAR FIT - US standard sizes. An athletic fit that sits close to the body for a wide range of motion, designed for optimal performance and all day comfort. FEATURES - Quarter zip closure;Thumbholes on long sleeves to keep them in place during workout
YZPST-BT152-600R Table glass passivation process 600V BT152-600R TO-220 SCR

BT152-600R/800R

Table glass passivation process 600V BT152-600R TO-220 SCR

YZPST-BT152-600R

  • Product features
    Silicon unilateral device NPNP four layer structure,
    P+ on the through diffusion isolation,
    Single mesa structure (Single Mesa),
    Table glass passivation process,
    The back   (anode)   electrode metal: Ti-Ni-Ag
    The high ability of   current shock resistance

    ●The main purposes
    Alternating current switch,
    AC DC power converter,
    The control of electric heating
    Motor speed control
    ● Package
    TO-220M1    TO-220F

Main    Feature (Tj=25℃)

Symbol Value Unit
IT (RMS) 20 A
VDRM   VRRM 600/800 V
IGT 200 uA

Absolute ratings (Limiting Values)

Symbol Parameter Value Unit
IT (RMS) RMS on-state current (180 °conduction angle) 20 A
IT(AV) AV on-state current (180 °conduction angle) 13 A
ITSM Non repetitive surge peak on-state 200 A
Current (tp=10ms)
IGM Peak gate current(tp=20us) 4 A
PGM Peak gate power 5 W
PG(AV) Average gate power 1 W
Tstg Storage temperature 110
Tj Operating junction temperature 85

Thermai Resistances

Symbol Parameter Value Unit
TO-220M1 2.2
Rth (j-c) Junction to case TO-220F 2.5 /W

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol Test Conditions Value Unit
Min Type Max
IGT VD=12V, RL=33Ω ---- 5 25 mA
VGT VD=12V, RL=33Ω ----- ----- 1.3 V
VGD VD=VDRMRL=3.3KΩRGK=1KΩ,Tj=125℃ 0.2 ----- ----- V
IH IT=500mA ----- ----- 30 mA
IL IG=1.2IGT ----- ----- 60 mA
dV/dt VD=67%VDRMGateOpen Tj=110℃ 500 v/ μs
----- -----
VTM IT=30A,tp=380 μs ----- ----- 1.6 V
dI/dt IG=2IGT 50 ----- ----- A/μs
I2T Tp=10ms ----- ----- 200 A2S
Tj=25℃ ----- ----- 10 μA
IDRM VD=VDRM Tj=125℃ ----- ----- 1 mA
Tj=25℃ ----- ----- 10 μA
IRRM VR=VRRM Tj=125℃ ----- ----- 1 mA

Measure of   package
((TO--220F))

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