ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~150

℃

Operating junction temperature range

Tj

-40~125

℃

Repetitive peak off-state voltage (T =25℃)

VDRM

1400

V

Repetitive peak reverse voltage (T =25℃)

VRRM

1400

V

Non repetitive surge peak Off-state voltage

VDSM

V_DRM +100

V

Non repetitive peak reverse voltage

VRSM

V_RRM +100

V

RMS on-state current

IT(RMS)

1.25

A

Non repetitive surge peak on-state current

(180° conduction angle, F=50Hz)

ITSM

20

A

I2t value for fusing (tp=10ms)

I2t

2.0

A2S

Critical rate of rise of on-state current

(I =2×IGT, tr ≤ 100 ns)

di/dt

50

A/μS

Peak gate current

IGM

1.0

A

Average gate power dissipation

PG(AV)

0.1

W

Maximum device temperature for

solderingPurposes(for 10 seconds maximum)

T_L

260

℃

ESD level

HBM

Class 3 (4000-16000V)

Humidity sensitive level

MSL

Three-level

(30℃,60%RH,168h)

Thermal Resistances

Symbol

Parameter

Value

Unit

Rth(j-a)

junction to ambient(DC)

60

℃/W

Rth(j-t)

Junction to tab (DC)

25

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol

Test Condition

Value

Unit

MIN.

TYP.

MAX.

IGT

V =12V R =140Ω

20

50

100

µA

VGT

-

0.8

1.0

V

VGD

V_D=V_DRM Tj=125℃ R=1KΩ

0.2

V

I_L

I_G=1.2I_GT

-

-

6

mA

I_H

IT=50mA

-

-

5

mA

dV/dt

VD=600V ,RGK=1KΩ, Tj=110℃

100

-

-

V/μs

STATIC CHARACTERISTICS

Symbol

Parameter

Value(MAX.)

Unit

VTM

ITM =2.5A tp=380μs

Tj =25℃

1.5

V

IDRM

VD=VDRM VR=VRRM

Tj =25℃

5

μA

IRRM

Tj =125℃

0.5

mA