YZPST-BD140-16

YZPST-BD140-16

PNP SILICON TRANSISTOR 

YZPST-BD140-16

TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16

DESCRIPTION

The BD140-16 is silicon epitaxial planar PNP transistors

in Jedec TO-126 plastic package, designed for audio

amplifiers and drivers utilizing complementary or quasi

compementary circuits.

The complementary NPN types are the BD139-16

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NPN SILICON TRANSISTOR P/N:YZPST-BD140-16

PNP SILICON TRANSISTOR 

YZPST-BD140-16

TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16

DESCRIPTION

The BD140-16 is silicon epitaxial planar PNP transistors

in Jedec TO-126 plastic package, designed for audio

amplifiers and drivers utilizing complementary or quasi

compementary circuits.

The complementary NPN types are the BD139-16

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current

IC

-1.5

A

Base Current

IB

-0.5

A

Total Dissipation at

Ptot

12.5

W

Max. Operating Junction Temperature

Tj

150

oC

Storage Temperature

Tstg

-55~150

oC

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter Symbol Test   Conditions Min. Typ. Max. Unit
Collector Cut-off Current ICBO VCB  = -80V, IE  = 0 -10 μA
Emitter Cut-off Current IEBO
VEB  = -5.0V, IC  = 0 -10 μA
VCEO
Collector-Emitter Sustaining Voltage I = -1.0mA, I = 0 -80 V
VCE  = -2.0V, I = -0.15A 100 250
DC Current Gain hFE
VCE  = -2.0V, I = -0.5A 100
VCE(sat)
Collector-Emitter Saturation Voltage I = -0.5A, IB  = -0.05A -0.5 V
VBE
Base-Emitter Voltage I = -0.5A, VCE  = -2.0V -1 V
fT
Transition Frequency VCE  = -5.0V,I = -50mA 80 MHz

 

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