YZPST-BD140-16
PNP SILICON TRANSISTOR
YZPST-BD140-16
TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16
DESCRIPTION
The BD140-16 is silicon epitaxial planar PNP transistors
in Jedec TO-126 plastic package, designed for audio
amplifiers and drivers utilizing complementary or quasi
compementary circuits.
The complementary NPN types are the BD139-16
PNP SILICON TRANSISTOR
YZPST-BD140-16
TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16
DESCRIPTION
The BD140-16 is silicon epitaxial planar PNP transistors
in Jedec TO-126 plastic package, designed for audio
amplifiers and drivers utilizing complementary or quasi
compementary circuits.
The complementary NPN types are the BD139-16
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter |
Symbol |
Value |
Unit |
Collector-Base Voltage |
VCBO |
-80 |
V |
Collector-Emitter Voltage |
VCEO |
-80 |
V |
Emitter-Base Voltage |
VEBO |
-5.0 |
V |
Collector Current |
IC |
-1.5 |
A |
Base Current |
IB |
-0.5 |
A |
Total Dissipation at |
Ptot |
12.5 |
W |
Max. Operating Junction Temperature |
Tj |
150 |
oC |
Storage Temperature |
Tstg |
-55~150 |
oC |
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Collector Cut-off Current | ICBO | VCB = -80V, IE = 0 | -10 | μA | ||
— | — | |||||
Emitter Cut-off Current | IEBO | |||||
VEB = -5.0V, IC = 0 | -10 | μA | ||||
VCEO | ||||||
Collector-Emitter Sustaining Voltage | IC = -1.0mA, IB = 0 | -80 | — | — | V | |
VCE = -2.0V, IC = -0.15A | 100 | 250 | ||||
DC Current Gain | hFE | |||||
VCE = -2.0V, IC = -0.5A | 100 | — | — | |||
VCE(sat) | ||||||
Collector-Emitter Saturation Voltage | IC = -0.5A, IB = -0.05A | -0.5 | V | |||
VBE | ||||||
Base-Emitter Voltage | IC = -0.5A, VCE = -2.0V | -1 | V | |||
fT | ||||||
Transition Frequency | VCE = -5.0V,IC = -50mA | 80 | MHz |