YZPST-MJE2955T
PNP SILICON POWER TRANSISTORS MJE2955T
The MJE2955T is an PNP transistor, which is complementary to MJE3055T and is used in audio power amplification and power conversion circuits.
Package form: TO-220
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
-70 |
V |
|
VCEO |
Collector-Emitter Voltage |
-60 |
V |
|
VEBO |
Emitter-Base Voltage |
-5 |
V |
|
IC |
Continuous Collector Current |
-10 |
A |
|
PTOT |
Total dissipation at Tcase=25 ℃ |
75 |
W |
|
Tj |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature Range |
-55-150 |
℃ |
● ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
|
Symbol |
Parameter |
Test Condition |
Value |
Unit |
||
|
Min |
Type |
Max |
||||
|
VCBO |
Collector-Base Breakdown Voltage |
IC= -10mA |
-70 |
|
|
V |
|
VCEO |
Collector-Emitter Breakdown Voltage |
IC= -200mA |
-60 |
|
|
V |
|
VEBO |
Emitter-Base Breakdown Voltage |
IE= -10mA |
- 5 |
|
|
V |
|
ICBO |
Collector Cutoff Current |
VCB= -70V |
|
|
1 |
mA |
|
IEBO |
Emitter Cutoff Current |
VEB= -5V |
|
|
5 |
mA |
|
hFE |
DC Current Gain |
IC= -4A,VCE= -4V |
20 |
|
100 |
|
|
VCE(sat) |
Collector-Base Breakdown Voltage |
IC= -4A,IB= -0.4A |
|
|
-1.1 |
V |
|
VBE(sat) |
Base-Emitter Saturation Voltage |
IC= -4A,IB= -4A |
|
|
-1.8 |
V |
|
fT |
Transition Frequency |
VCE=10V, IC=0.5A，f=1MHZ |
2 |
|
|
MHZ |
|
a：Pulse Test，tp ≤300us，δ≤2% |
||||||
PACKAGE MECHANICAL DATA
