YZPST-MJD31C
DESRCRIPTION:
The MJD31C is Silicon NPN power transistors ，designed for medium power linear switching applications.
Silicon NPN Power Transistors
P/N: YZPST-MJD31C
DESRCRIPTION:
The MJD31C is Silicon NPN power transistors ，designed for medium power linear switching applications.
ABSOLUTE MAX I MUM RATINGS
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
100 |
V |
|
VCEO |
Collector-Emitter Voltage |
100 |
V |
|
VEBO |
Emitter-Base Voltage |
5 |
V |
|
IC |
Continuous Collector Current |
3 |
A |
|
ICM |
Collector current-Pulse |
5 |
A |
|
IB |
Base Current |
1 |
A |
|
PTOT |
Total dissipation at Tcase=25 ℃ |
15 |
W |
|
Tj |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature Range |
-55〜 150 |
℃ |
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
|
Symbol |
Parameter |
Test Condition |
Value |
Unit |
||
|
Min |
Type |
Max |
||||
|
ICEO |
Collector Cutoff Current |
VCE= 60 V |
|
|
0.3 |
mA |
|
IEBO |
Emitter Cutoff Current |
VEB= 5 V |
|
|
1 |
mA |
|
VCEO（SUS） |
Collector-Emitter Sustaining Voltage |
IC= 30mA |
100 |
|
|
V |
|
VCEsat |
Collector-Emitter Saturation Voltage |
IC=3A IB=0.375A |
|
|
1.2 |
V |
|
VBE |
Base-Emitter On Voltage |
IC=3A ; VCE=4V |
|
|
1.8 |
V |
|
hFE- 1 |
DC current gain |
IC= 1A ; VCE=4V |
25 |
|
|
|
|
hFE-2 |
DC current gain |
IC=3A ; VCE=4V |
10 |
|
50 |
|
|
fT |
Transiton frequency |
IC=0.5A ; VCE= 10V |
3 |
|
|
MHz |
PACKAGE MECHANICAL DATA
