Dual Switch IGBT Module

P/N:YZPST-800DDM17

KEY PARAMETERS

VCES :1700V

VCE(sat)* (typ):2.7V

IC (max):800A

IC(PK) (max):1600V

FEATURES

• 10µs Short Circuit Withstand
• High Thermal Cycling Capability
• Non Punch Through Silicon
• Isolated AlSiC Base with AlN Substrates
• Lead Free construction

APPLICATIONS

• High Reliability Inverters
• Motor Controllers
• Traction Drives

The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.

The 800DDM17 is a dual switch 1700V, n-channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise

PACKAGE DETAILS

All dimensions in mm, unless stated otherwise.

DO NOT SCALE.