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YZPST-600HFX170C6S IGBT Module

YZPST-600HFX170C6S IGBT Module

IGBT Module YZPST-600HFX170C6S

1700V/600A 2 in one-package

General Description
IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

YZPST-GD600HFX170C6S​​​
Features
. Low VCE(sat) Trench IGBT technology
. 10μs short circuit capability
. VCE(sat) with positive temperature coefficient
. Maximum junction temperature 175oC
. Low inductance case
. Fast & soft reverse recovery anti-parallel FWD
. Isolated copper baseplate using DBC technology

Typical Applications
. Inverter for motor drive
. AC and DC servo drive amplifier
. Uninterruptible power supply

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DESCRIPTION

IGBT Module YZPST-600HFX170C6S

1700V/600A 2 in one-package

General Description
IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

​​​
Features
. Low VCE(sat) Trench IGBT technology
. 10μs short circuit capability
. VCE(sat) with positive temperature coefficient
. Maximum junction temperature 175oC
. Low inductance case
. Fast & soft reverse recovery anti-parallel FWD
. Isolated copper baseplate using DBC technology

Typical Applications
. Inverter for motor drive
. AC and DC servo drive amplifier
. Uninterruptible power supply

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current   TC=25oC

 TC= 100oC

1069

600

A

ICM

Pulsed Collector Current  tp=1ms

1200

A

PD

Maximum Power Dissipation   T =175oC

4166

W

Diode

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

600

A

IFM

Diode Maximum Forward Current  tp=1ms

1200

A

Module

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=600A,VGE=15V, Tj=25oC 1.85 2.2
VCE(sat) Collector to Emitter IC=600A,VGE=15V, Tj=125oC 2.25 V
Saturation Voltage IC=600A,VGE=15V, Tj=150oC 2.35
VGE(th) Gate-Emitter Threshold Voltage IC= 12.0mA,VCE=VGE, Tj=25oC 5.6 6.2 6.8 V
ICES Collector Cut-Off VCE=VCES,VGE=0V, 5 mA
Current Tj=25oC
IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25oC 400 nA
RGint Internal Gate Resistance 1.3 Ω
Cies Input Capacitance VCE=25V,f=1MHz, 72.3 nF
Cres Reverse Transfer VGE=0V 1.75 nF
Capacitance
QG Gate Charge VGE=- 15…+15V 5.66 μC
td(on) Turn-On Delay Time 170 ns
tr Rise Time 67 ns
td(off) Turn-Off Delay Time VCC=900V,IC=600A,  RG= 1.0Ω,VGE=±15V, Tj=25oC 527 ns
tf Fall Time 138 ns
Eon Turn-On Switching 154 mJ
Loss
Eoff Turn-Off Switching 132 mJ
Loss
td(on) Turn-On Delay Time 168 ns
tr Rise Time 80 ns
td(off) Turn-Off Delay Time VCC=900V,IC=600A,  RG= 1.0Ω,VGE=±15V, Tj= 125oC 619 ns
tf Fall Time 196 ns
Eon Turn-On Switching 236 mJ
Loss
Eoff Turn-Off Switching 198 mJ
Loss
td(on) Turn-On Delay Time 192 ns
tr Rise Time 80 ns
td(off) Turn-Off Delay Time VCC=900V,IC=600A,  RG= 1.0Ω,VGE=±15V, Tj= 150oC 640 ns
tf Fall Time 216 ns
Eon Turn-On Switching 259 mJ
Loss
Eoff Turn-Off Switching 215 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC= 1000V, VCEM≤1700V 2400 A

Package Dimensions

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