Symbol

Parameter

Test Conditions

Values

Unit

IGBT

VCES

Collector - Emitter Voltage

TVj=25°C

1250

V

VGES

Gate - Emitter Voltage

±30

V

IC

DC Collector Current

TC=25°C

450

A

TC=80°C

300

A

ICM

Repetitive Peak Collector Current

tp=1ms

600

A

Ptot

Power Dissipation Per IGBT

3000

W

Diode

VRRM

Repetitive Reverse Voltage

TVj=25°C

1250

V

IF(AV)

Average Forward Current

TC=25°C

450

A

TC=80°C

300

A

IFRM

Repetitive Peak Forward Current

tp=1ms

600

A

I2t

TVj =125°C, t=10ms, VR=0V

19000

A2s

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IGBT

VGE(th)

Gate - Emitter Threshold Voltage

VCE=VGE, IC=2.0mA

5.0

6.8

V

VCE(sat)

Collector - Emitter

IC=300A, VGE=15V, TVj=25°C

2.2

2.6

V

Saturation Voltage

IC=300A, VGE=15V, TVj=125°C

2.4

V

ICES

Collector Leakage Current

VCE=1250V, VGE=0V, TVj=25°C

1

mA

VCE=1250V, VGE=0V, TVj=125°C

5

mA

Rgint

Integrated Gate Resistor

Per switch

10

Ω

IGES

Gate Leakage Current

VCE=0V,VGE±15V, TVj=125°C

-500

500

nA

Cies

Input Capacitance

VCE=25V, VGE=0V, f =1MHz

21

nF

Cres

Reverse Transfer Capacitance

1.5

nF

td(on)

Turn - on Delay Time

VCC=600V,IC=300A,

TVj =25°C

90

ns

RG =4.7Ω,

TVj =125°C

110

ns

tr

Rise Time

VGE=±15V,

TVj =25°C

55

ns

Inductive Load

TVj =125°C

60

ns

td(off)

Turn - off Delay Time

VCC=600V,IC=300A,

TVj =25°C

460

ns

RG =4.7Ω,

TVj =125°C

500

ns

tf

Fall Time

VGE=±15V,

TVj =25°C

55

ns

Inductive Load

TVj =125°C

60

ns

Eon

Turn - on Energy

VCC=600V,IC=300A,

TVj =25°C

28

mJ

RG =4.7Ω,

TVj =125°C

12

mJ

Eoff

Turn - off Energy

VGE=±15V,

TVj =25°C

25

mJ

Inductive Load

TVj =125°C

13

mJ

ISC

Short Circuit Current

1300

A

RthJC

Junction-to-Case Thermal Resistance (Per IGBT)

0.13

K /W

Diode

VF

Forward Voltage

IF=300A , VGE=0V, TVj =25°C

2

2.4

V

IF=300A , VGE=0V, TVj =125°C

2.2

V

Qrr

Reversed Chargr

IF=300A , VR=600V

50

uC

IRRM

Max. Reverse Recovery Current

diF/dt=-2400A/μs

170

A

Erec

Reverse Recovery Energy

TVj =125°C

20

mJ

RthJCD

Junction-to-Case Thermal Resistance

(Per Diode)

0.12

K /W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

TVj max

Max. Junction Temperature

175

°C

TVj op

Operating Temperature

-40

150

°C

Tstg

Storage Temperature

-40

125

°C

Visol

Insulation Test Voltage

AC, t=1min

3000

V

Torque

To-Sink

Recommended（M6）

1.1

2

N·m

Torque

N·m

Weight

328

g