YZPST-RGN150C066
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YZPST-RGN150C066

P/N:YZPST-RGN150C066
150V Super-GaN FET
150V, 230A,3. 2mΩ, Super-GaN FET in WLCSP 3. 5x2. 13
Features
GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small package size
Zero reverse recovery charge
Applications
Synchronous rectification
Class-D audio
High frequency DC-DC converter
Communication base station
Motor driver
description1
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DESCRIPTION


P/N:YZPST-RGN150C066
150V Super-GaN FET
150V, 230A,3. 2mΩ, Super-GaN FET in WLCSP 3. 5x2. 13
Features
GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance Very small package size
Zero reverse recovery charge
Applications
Synchronous rectification Class-D audio
High frequency DC-DC converter Communication base station
Motor driver

Pin information

PIN

Pin Description

Pin Function

2,4,6,8

Source

Power Source

3,5,7

Drain

Power Drain

1

Gate

Driver Gate

Maximum ratings  at Tj  = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

MAX

UNIT

VDS

Drain-to-Source Voltage (Continuous)

150

V

ID

Continuous current

60

A

Pulsed (25˚C, TPULSE  = 300 µs)

230

A

VGS

Gate-to-Source Voltage

6

V

Gate-to-Source Voltage

-4

V

TJ

Operating Temperature

-40 to 150

˚C

TSTG

Storage Temperature

-40 to 150

˚C

Thermal characteristics

SYMBOL

PARAMETER

TYP

UNIT

RθJC

Thermal Resistance, Junction to Case

0.3

˚C/W

RθJB

Thermal Resistance, Junction to Board

1.5

˚C/W

RθJA

Thermal Resistance, Junction to Ambient 1

33

˚C/W

Electric characteristics at Tj  = 25 °C unless otherwise specified. Static characteristics

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

TEST CONDITIONS

BVDSS

Drain-to-Source Voltage

150

-

-

V

VGS = 0 V, ID = 400 μA

IDSS

Drain Source Leakage

-

4

28

µA

VGS = 0 V, VDS  =80 V

 

IGSS

Gate-to-Source Forward Leakage(25°C)

-

1.2

23

µA

VGS  = 5 V

Gate-to-Source Forward Leakage(125°C)

 

0.1

2

mA

VGS  = 5 V

Gate-to-Source Reverse Leakage

-

0.1

0.5

µA

VGS = -4 V

VGS(TH)

Gate Threshold Voltage

0.8

1.1

2.5

V

VDS  = VGS , ID  = 9 mA

RDS(on)

Drain-Source On-state Resistance

-

2.5

3.2

mΩ

VGS  = 5 V, ID  = 25 A

VSD

Source-Drain Forward Voltage

-

1.5

-

V

IS  = 0.5 A, VGS  = 0 V

Dynamic characteristics

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

TEST CONDITIONS

CISS

Input Capacitance

-

1000

-

 

 

pF

VGS  = 0 V, VDS  = 50 V

COSS

Output Capacitance

-

460

-

VGS  = 0 V, VDS  = 50 V

CRSS

Reverse Transfer Capacitance

-

8.2

-

VGS  = 0 V, VDS  = 50 V

COSS(ER)

Energy Related COSS

-

700

-

VGS  = 0 V, VDS  = 0 V to 50 V

COSS(TR)

Time Related COSS

-

1020

-

VGS  = 0 V, VDS  = 0 V to 50 V

RG

Gate resistance

-

2.2

-

f = 5 MHz, open drain

QG

Total Gate Charge 1

 

-

9.2

12

 

 

 

nC

VGS  = 5 V, VDS  = 50 V, ID= 25 A

QGS

Gate to Source Charge

-

1.9

-

VDS  = 0 V to 50 V, ID = 25 A

QGD

Gate to Drain Charge

-

1.7

-

VDS  = 0 V to 50 V, ID = 25 A

QG(TH)

Gate Charge at Threshold

-

1.1

-

VDS  = 0 V to 50 V, ID = 25 A

QOSS

Output Charge

-

50

-

VGS  = 0 V, VDS  = 0 V to 50 V

Package Reference

Land Pattern

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