YZPST-RGN040C024
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YZPST-RGN040C024

P/N:YZPST-RGN040C024
40V Super-GaN FET
40V, 160A, 4. 3mΩ, Super -GaN FET in FCQFN 3x4
Features
GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small footprint
Applications
High frequency DC-DC converter
Point of Load
RF envelope tracking
PC charger
Mobile power bank
Motor driver
description1
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DESCRIPTION


P/N:YZPST-RGN040C024
40V Super-GaN FET
40V, 160A, 4. 3mΩ, Super -GaN FET in FCQFN 3x4
Features
GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small footprint
Applications
High frequency DC-DC converter
Point of Load
RF envelope tracking
PC charger
Mobile power bank
Motor driver

Pin information

Pin

Pin description

Pin function

1, 2, 24, 25

Gate

Driver Gate

3-7, 9, 11-20, 22

Source

Source

8, 10, 21, 23

Drain

Power Drain

Key performance parameters at TJ = 25 °C

Parameter

Value

Unit

VDS,max

40

V

RDS(on),max @ VGS = 5 V

4.3

QG,typ @ VDS  = 20V

6.2

nC

IDS,Pulse

160

A

QOSS@ VDS = 20V

14

nC

Maximum Ratings  at TJ  = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

MAX

UNIT

VDS

Drain-to-Source Voltage (Continuous)

40

V

ID

Continuous current

24

A

Pulsed (25˚C, TPulse  = 300 µs)

160

A

VGS

Gate-to-Source Voltage

6

V

Gate-to-Source Voltage

-4

V

Ptot

Power dissipation (Tc, bottom  = 25°C)

43

W

TJ

Operating Temperature

-40 to 150

˚C

TSTG

Storage Temperature

-40 to 150

˚C

Thermal Characteristics

SYMBOL

PARAMETER

TYP

UNIT

Note/Test Condition

RθJC_top

Thermal Resistance, Junction to Case (top)

26.2

˚C/W

 

RθJC_bot

Thermal Resistance, Junction to Case (bottom)

2.9

˚C/W

 

RθJA

Thermal Resistance, Junction to Ambient 1

45.9

˚C/W

 

Tsold

Maximum reflow soldering temperature

260

°C

MSL3

Electric Characteristics  at TJ  = 25 °C, unless specified otherwise

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

TEST CONDITIONS

BVDSS

Drain-to-Source Voltage

40

 

 

V

VGS  = 0 V, ID  = 500 μA

IDSS

Drain Source Leakage

 

 

100

µA

VGS  = 0 V, VDS  = 32 V

 

IGSS

Gate-to-Source Forward Leakage

 

3

80

µA

VGS  = 5 V

Gate-to-Source Forward Leakage

 

50

500

µA

VGS  = 5 V, Tj  = 125 °C

Gate-to-Source Reverse Leakage

 

1

20

µA

VGS = -4 V

VGS(TH)

Gate Threshold Voltage

0.7

 

2.4

V

VDS  = VGS , ID  = 7 mA

RDS(on)

Drain-Source On-state Resistance

 

3

4.3

mΩ

VGS  = 5 V, ID  = 15 A

VSD

Source-Drain Forward Voltage

 

1.9

 

V

IS = 0.5 A, VGS = 0 V

Dynamic characteristics

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

TEST CONDITIONS

Ciss

Input Capacitance

 

805

 

 

 

pF

 

VGS  = 0 V, VDS  = 20 V

Coss

Output Capacitance

 

428

 

Crss

Reverse Transfer Capacitance

 

13

 

Coss(er)

Energy Related Coss

 

600

 

VGS = 5 V, VDS = 20 V, ID=15 A

Coss(tr)

Time Related Coss

 

703

 

RG

Gate resistance

 

1.7

 

Ω

f = 1 MHz

QG

Total Gate Charge

 

6.2

8.5

 

 

 

 

nC

VGS = 5 V, VDS = 20 V, ID=15 A

QGS

Gate to Source Charge

 

1.4

 

 

VDS  = 20 V, ID =15 A

QGD

Gate to Drain Charge

 

0.8

 

QG(TH)

Gate Charge at Threshold

 

0.9

 

QOSS

Output Charge

 

14

 

VGS  = 0 V, VDS  = 0 V to 20 V

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