SYMBOL

PARAMETER

MAX

UNIT

VDS

Drain-to-Source Voltage (Continuous)

100

V

ID

Continuous current

60

A

Pulsed (25˚C, TPULSE  = 300 µs)

230

A

VGS

Gate-to-Source Voltage

6

V

Gate-to-Source Voltage

-4

V

TJ

Operating Temperature

-40 to 150

˚C

TSTG

Storage Temperature

-40 to 150

˚C

SYMBOL

PARAMETER

TYP

UNIT

RθJC

Thermal Resistance, Junction to Case

0.3

˚C/W

RθJB

Thermal Resistance, Junction to Board

1.5

˚C/W

RθJA

Thermal Resistance, Junction to Ambient 1

33

˚C/W

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

TEST CONDITIONS

BVDSS

Drain-to-Source Voltage

100

-

-

V

VGS = 0 V, ID = 400 μA

IDSS

Drain Source Leakage

-

4

28

µA

VGS = 0 V, VDS  =80 V

IGSS

Gate-to-Source Forward Leakage(25°C)

-

1.2

23

µA

VGS  = 5 V

Gate-to-Source Forward Leakage(125°C)

0.1

2

mA

VGS  = 5 V

Gate-to-Source Reverse Leakage

-

0.1

0.5

µA

VGS = -4 V

VGS(TH)

Gate Threshold Voltage

0.8

1.1

2.5

V

VDS  = VGS , ID  = 9 mA

RDS(on)

Drain-Source On-state Resistance

-

2.5

3.2

mΩ

VGS  = 5 V, ID  = 25 A

VSD

Source-Drain Forward Voltage

-

1.5

-

V

IS  = 0.5 A, VGS  = 0 V

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

TEST CONDITIONS

CISS

Input Capacitance

-

1000

-

pF

VGS  = 0 V, VDS  = 50 V

COSS

Output Capacitance

-

460

-

VGS  = 0 V, VDS  = 50 V

CRSS

Reverse Transfer Capacitance

-

8.2

-

VGS  = 0 V, VDS  = 50 V

COSS(ER)

Energy Related COSS

-

700

-

VGS  = 0 V, VDS  = 0 V to 50 V

COSS(TR)

Time Related COSS

-

1020

-

VGS  = 0 V, VDS  = 0 V to 50 V

RG

Gate resistance

-

2.2

-

Ω

f = 5 MHz, open drain

QG

Total Gate Charge 1

-

9.2

12

nC

VGS  = 5 V, VDS  = 50 V, ID= 25 A

QGS

Gate to Source Charge

-

1.9

-

VDS  = 0 V to 50 V, ID = 25 A

QGD

Gate to Drain Charge

-

1.7

-

VDS  = 0 V to 50 V, ID = 25 A

QG(TH)

Gate Charge at Threshold

-

1.1

-

VDS  = 0 V to 50 V, ID = 25 A

QOSS

Output Charge

-

50

-

VGS  = 0 V, VDS  = 0 V to 50 V