YZPST-P015PJE120AT1B1

YZPST-P015PJE120AT1B1

P/N:YZPST-P015PJE120AT1B1
PIM with Trench Field-Stop IGBT,Emitter Controlled Diode and NTC
Features
Trench+Field Stop Technology
1200V Trench Field-Stop IGBT
Low VCE(sat)with Low Switching Losses
Applications
Frequency Coverters
Motor Drives
Auxiliary Inverters
Equivalent Circuit Schematic
Package Outlines(mm)
YZPST-P015PJE120AT1B1 Package

description1
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DESCRIPTION
P/N:YZPST-P015PJE120AT1B1
PIM with Trench Field-Stop IGBT,Emitter Controlled Diode and NTC
Features
Trench+Field Stop Technology
1200V Trench Field-Stop IGBT
Low VCE(sat)with Low Switching Losses
Applications
Frequency Coverters
Motor Drives
Auxiliary Inverters
Equivalent Circuit Schematic
YZPST-P015PJE120AT1B1-1

IGBT-Inverter

Maximum Rated Values

Symbol

Description

Conditions

Values

Unit

VcEs

Collector-Emitter Voltage

TU=25℃

1200

V

VGES

Gate-Emitter Peak Voltage

T=25℃

±20

V

Ic

Continuous DC Collector Current

Tc=100℃

15

A

cRM

Repetitive Peak Collector Current

tp=1ms

30

A

Ptot

Total Power Dissipation

Tc=25℃,Tvjmax=175℃

130

W

Characteristic Values

Symbol

 

Description

 

Conditions

Values

 

Unit

Min.

Typ.

Max.

VcE(sat)

Collector-Emitter Saturation Voltage

VGE=15V,Ic=15A,TU=25℃

---

2.12

---

V

VGE=15V,Ic=15A,TU=125℃

---

2.48

--

V

VGEth)

Gate Threshold Voltage

VGE=VcE,Ic=0.48mA

 

5.6

 

V

IcES

Collector-Emitter Cut-Off Current

VcE=1200V,VGE=0V

---

---

1

mA

GES

Gate-Emitter Leakage Current

VGE=20V,VcE=0V

---

---

100

nA

Cies

Input Capacitance

 

VcE=25V,VGE=0V,f=1MHz

---

990

---

pF

Coes

Output Capacitance

---

85

---

pF

Cres

Reverse Transfer Capacitance

---

36

---

pF

ta(on)

Turn-on Delay Time

 

VcE=600V

VGE=±15V

Ic=15A

R=39Ω

Inductive Load T=25℃

---

38

---

ns

t.

Turn-on Rise Time

---

25

---

ns

tdof)

Turn-off Delay Time

---

150

---

ns

t

Turn-off Fall Time

---

180

---

ns

Eon

Turn-on Switching Loss

---

1.11

---

mJ

Eof

Turn-off Switching Loss

---

0.95

---

mJ

lsc

Short Circuit data

VGE≤15V,Vcc=800V  tp≤10μs,TU=150℃

 

---

62

 

---

A

RithJC

Thermal Resistance,Junction to Case

Per IGBT

---

---

1.15

K/W

TvJop

Virtual Junction Temperature

Under Switching

-40

---

150

Package Outlines(mm)
YZPST-P015PJE120AT1B1 Package

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