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YZPST-S65R650
P/N:YZPST-S65R650
S65R650 MOSFET
DESRCRIPTION:
The S65R650 is a Superjunction MOSFET designed to have better characteristics, such as low on-state resistance,
Low gate charge, Ultra fast switching ，and High ruggedness. These devices are well suited for high efficiency switched mode power supplies.
ABSOLUTE MAX I MUM RATINGS
|
Symbol |
Parameter |
Value |
Unit |
|
|
VDS |
Drain-Source Voltage |
650 |
V |
|
|
VGS |
Gate-Source Voltage |
±30 |
V |
|
|
ID |
Continuous Drain Current |
Tc=25℃ |
8 |
A |
|
Tc=100℃ |
6 |
A |
||
|
IDM |
Pulsed Drain Current |
30 |
A |
|
|
Ptot |
Power Dissipation (TC=25°C) |
93 |
W |
|
|
Tj |
Junction Temperature |
150 |
℃ |
|
|
Tstg |
Operation and Storage Temperature |
-55 to +150 |
℃ |
|
|
EAS |
Avalanche Energy |
74 |
mJ |
|
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
|
Symbol |
Parameter |
Test Condition |
Value |
Unit |
||
|
Min |
Type |
Max |
||||
|
BVDSS |
Drain-Source Breakdown Voltage |
VGS= 0V, ID= 250μA |
650 |
|
|
V |
|
IDSS |
Drain-Source Leakage Current |
VDS=650V ,VGS=0V |
|
|
1 |
uA |
|
IGSS |
Gate-Source Leakage Current |
VGS= ±30V |
|
|
±100 |
nA |
|
VGS(th) |
Gate Threshold Voltage |
VDS= VGS, ID= 250μA |
2.5 |
|
4.5 |
V |
|
RDS(ON) |
Static Drain-Source On-State Resistance |
VGS= 10V ，ID= 4A |
|
503 |
650 |
mΩ |
PACKAGE MECHANICAL DATA
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