YZPST-RH55N30T
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YZPST-RH55N30T

P/N: YZPST-RH55N30T
Logic-LeveI Gate Drive
Advanced process TechnoIogy
Dynamic dv/dt Rating
175℃ operating TemperatUre
Fast switching
FUIIyAvaIanche Rated
Lead-Free
RF Power MOSFET - 30MHz
V DSS=55V
RDS(on)=0.035Ω
ID=30A
RH55N30T TO3P-3

description1
Zipper closure 1/5 zip athletic pullovers for men. Stretchy, lightweight, fast-drying fabric for superior performance. REGULAR FIT - US standard sizes. An athletic fit that sits close to the body for a wide range of motion, designed for optimal performance and all day comfort. FEATURES - Quarter zip closure;Thumbholes on long sleeves to keep them in place during workout
DESCRIPTION


P/N: YZPST-RH55N30T
Logic-LeveI Gate Drive
Advanced process TechnoIogy
Dynamic dv/dt Rating
175℃ operating TemperatUre
Fast switching
FUIIyAvaIanche Rated
Lead-Free
RF Power MOSFET - 30MHz
V DSS=55V
RDS(on)=0.035Ω
ID=30A
RH55N30T TO3P-3

AbsoIute Maximum Ratings

parameter Max. units
ID @ Tc = 25。c continuous Drain current, VGS @ 10V 30
ID @ Tc = 100。c continuous Drain current, VGS @ 10V 21
A
IDM PuIsed Drain current 0 110
P@Tc = 25。c Power  Dissipation 68 w
Linear Derating Factor 0.45 w/。c
VGS Gate-to-source  VoItage ±16 V
EAS singIe PuIse AvaIanche Energy  110 mJ
IAR AvaIanche  current① 16 A
EAR Repetitive AvaIanche Energy① 6.8 mJ
dv/dt Peak Diode Recovery dv/dt  5 V/ns
TJ operating Junction and -55  to + 175
storage Temperature Range 。c
TSTG
soIdering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf.in (1.1N.m)

ThermaI Resistance

parameter Min. TYP. Max. units
RθJc Junction-to-case 一一一 一一一 2.2 ℃/W
RθcS case-to-sink, FIat, Greased surface 一一一 0.5 一一一
RθJA Junction-to-Ambient 一一一 一一一 62

YZPST-RH55N30T  TO3P-3

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