TO-252 R100P11A 100V P-Channel Trench Power MOSFET
100V P-Channel Trench Power MOSFET
General Description
The R 100P11A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications.
Features
Low Gate Charge
100% UIS Tested, 100% DVDS Tested
High Power and current handing capability
Lead free product is acquired
Application
PWM Applications
Load Switch
Power Management
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DESCRIPTION
100V P-Channel Trench Power MOSFET
General Description
The R 100P11A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications.
Features
Low Gate Charge
100% UIS Tested, 100% DVDS Tested
High Power and current handing capability
Lead free product is acquired
Application
PWM Applications
Load Switch
Power Management
Key Performance Parametes
|
Parameter |
Value |
Unit |
|
VDS |
-100 |
V |
|
RDS(ON)_TYP |
156 |
mΩ |
|
ID |
-11 |
A |
|
QG |
42.5 |
nC |
|
Symbol |
Parameter |
Limit |
Unit |
|
VDS |
Drain-Source Voltage (VGS=0V) |
-100 |
V |
|
VGS |
Gate-Source Voltage (VDS=0V) |
±20 |
V |
|
ID |
Drain Current-Continuous(TC=25℃) |
-11 |
A |
|
Drain Current-Continuous(TC=100℃) |
-6.7 |
A |
|
|
IDM (pluse) |
Drain Current-Continuous@ Current-Pulsed (Note 1) |
-44 |
A |
|
PD |
Maximum Power Dissipation(TC=25℃) |
48 |
W |
|
Maximum Power Dissipation(TC=100℃) |
19 |
W |
|
|
EAS |
Avalanche energy (Note 2) |
72 |
mJ |
|
TJ, TSTG |
Operating Junction and Storage Temperature Range |
-55 To 150 |
℃ |
Table 2. Thermal Characteristic
|
Symbol |
Parameter |
Typ |
Max |
Unit |
|
RθJC |
Thermal Resistance, Junction-to-Case |
|
2.6 |
℃/W |
TO-252 Package Information
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